Patents Assigned to Commissariat Energie Atomique
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Publication number: 20130015858Abstract: A linear resonator of a high-frequency antenna suitable for emitting a radiofrequency energisation signal and for receiving a radiofrequency relaxation signal, the linear resonator includes a radiating element to emit a radiofrequency energisation signal and receive a radiofrequency relaxation signal. The resonator also includes: a balun circuit including a power-supply line and two coupling lines; a substrate made of a dielectric material, supporting the radiating element which contains the balun circuit; two contact points connecting the balun circuit to the radiating element, the contact points being formed by one of the ends of the coupling lines extending out of the substrate, the distance separating the two contact points being selected so as to ensure the impedance matching of the resonator; and a chip floorplan separating the coupling lines from the radiating element.Type: ApplicationFiled: February 7, 2011Publication date: January 17, 2013Applicant: Commissariat a energie atomique et aux energies alternativesInventors: Guillaume Ferrand, Michel Luong, Alain France
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Publication number: 20090188899Abstract: A device for preventive treatment of an optical surface designed to be exposed to a laser flow including a thermal excitation source for providing a localized thermal annealing of a site of the optical surface) by means of a beam applied to the site. The device further includes a measuring member for measuring, in real time said during said localized thermal annealing, a quantity representing the temperature of the site of the optical surface) and at least one control member for increasing the linear power density of the beam applied to the site by the excitation source and, when the quantity reaches a predetermined set point, for gradually decreasing the linear power density.Type: ApplicationFiled: January 26, 2007Publication date: July 30, 2009Applicant: COMMISSARIAT A A'ENERGIE ATOMIQUEInventors: Philippe Bouchut, Jean-Guillaume Coutard, Annelise During
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Patent number: 7511483Abstract: The device for sensing a RF field comprises a flux-receiving loop (1) including a circumferential path having a defined path width (d), the flux-receiving loop (1) having a portion (10) that transforms the magnetic flux flowing through the flux receiving loop (1) into a high magnetic field. The portion (10) comprises a constriction of the flux-receiving loop (1) that concentrates the current lines in the circumferential path to define a current-field transformer. At least one very low noise magnetic field transducer (12) is located at a very close distance from the constriction.Type: GrantFiled: January 31, 2003Date of Patent: March 31, 2009Assignee: Commissariat Energie AtomiqueInventors: Myriam Pannetier, Claude Fermon
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Publication number: 20080175339Abstract: A method for soft demapping of complex-valued symbols y(k) (k=1, 2, . . . , K) by calculation of a Logarithm of Likelihood Ratio (LogLR) such that: Log ? ? LR ? ( b I , q ) = ln ? ? ? ? ? S l , q ( 1 ) ? exp ( - 1 2 ? ? ? ? y ~ ? ( k ) - ? ? 2 ) ? ? ? ? S q , l ( 0 ) ? exp ( - 1 2 ? ? ? ? y ~ ? ( k ) - ? ? 2 ) wherein bI,q is the qth coded bit of an in-phase part of a transmitted signal, ? is an asymptotic Signal-to-Interference-plus-Noise Ratio, {tilde over (y)}(k) is a standardized symbol associated with y(k), ? is a reference symbol of QAM constellation associated with a M-QAM modulation, S(1)I,q and S(0)I,q are complex plane partitions that bring together, respectively, all reference symbols ? having a “1” at the position (I, q) and all reference symbols ? having a “0” at the position (I, q), a formula similar to LogLR being given for the bit bQ,p, pth coded bit of a quadrature part of the transmitted signal.Type: ApplicationFiled: March 8, 2005Publication date: July 24, 2008Applicant: Commissariat A'energie AtomiqueInventors: Dimitri Ktenas, Mathieu Bouvier Des Noes, Julien Barletta, Claire Guyon
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Patent number: 7399981Abstract: The device comprises a device (2) for creating an essentially linear target (4) in an evacuated space where laser beams (1) are focused, the target being suitable for interacting with the focused laser beams (1) to emit a plasma emitting radiation in the extreme ultraviolet. A receiver device (3) receives the target (4) after it has interacted with the focused laser beams (1), and a collector device (110) collects the EUV radiation emitted by the target (4). The focusing elements (11) for focusing the laser beams on the target (4) are arranged in such a manner that the laser beams (1) are focused on the target (4) laterally, being situated in a common half-space relative to the target (4) and being inclined at a determined angle lying in the range about 60° to about 90° relative to a mean collection axis (6) perpendicular to the target (4).Type: GrantFiled: June 13, 2005Date of Patent: July 15, 2008Assignees: Commissariat Energie Atomique, Alcatel Vacuum Technology FranceInventors: Guy Cheymol, Philippe Cormont, Pierre-Yves Thro, Olivier Sublemontier, Martin Schmidt, Benoit Barthod
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Publication number: 20080153890Abstract: Compounds of formula (I): wherein: R1 represents hydrogen, alkylcarbonyloxyalkyl or alkylcarbonylthioalkyl, R2 represents hydrogen, alkylcarbonyloxyalkyl, arylcarbonylthioalkyl or optionally substituted arylalkyl, R3 represents phenyl, which is optionally substituted, or indolyl, their isomers, and addition salts thereof with a pharmaceutically acceptable acid or base. Medicinal products containing the same which are useful in the treatment of arterial hypertension and complications thereof.Type: ApplicationFiled: February 28, 2006Publication date: June 26, 2008Applicants: LES LABORATOIRES SERVER, COMMISSARIAT A 'ENERGIE ATOMIQUEInventors: Vincent Dive, Nicolas Jullien, Elizabeth Scalbert, Athanasios Yiotakis, Anastasios Makaritis
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Publication number: 20080061293Abstract: A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semiconductor region doped with a second type of conductivity, opposite the first type of conductivity. The first amorphous semiconductor region, insulated for the second amorphous semiconductor region by at least ore dielectric region in the contact with the semiconductor substrate, and the second amorphous semiconductor region form an interdigitated structure.Type: ApplicationFiled: January 18, 2006Publication date: March 13, 2008Applicant: COMMISSARIAT A'ENERGIE ATOMIQUEInventors: Pierre Ribeyron, Claude Jaussaud
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Patent number: 7342396Abstract: The device for sensing a magnetic field comprises a closed superconducting pick-up loop (1) having a path width (d) etched out of a single layer superconducting thin film and provided with a constriction (15) having a width (w) of narrow dimension smaller than the path width (d). The closed superconducting pick-up loop (1) constitutes a flux-to-field transformer (FFDT). At least one magnetoresistive element (2) is placed on top of or below the superconducting thin film, is isolated from the superconducting thin film by a thin insulating layer and is located so that an active part of the magnetoresistive element (2) is at the location of the constriction (15) and has a width equal to or less than the width of the constriction (15). The active part of the magnetoresistive element (2) is oriented so that the bias current in this active part is directed essentially along the constriction (15), orthogonally to the width of narrow dimension.Type: GrantFiled: January 31, 2003Date of Patent: March 11, 2008Assignees: Commissariat Energie Atomique, Elekta Neuromag OyInventors: Myriam Pannetier, Claude Fermon, Juha Simola
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Publication number: 20070109210Abstract: An antenna includes a central loop and four adjacent coplanar eccentric loops. The central loop creates a magnetic field that is essentially perpendicular to the antenna. The centres of gravity of the four eccentric loops are essentially located on the periphery of the central loop and the eccentric loops are supplied in such a way as to predominantly create a rotating field in a plane parallel to the plane of the antenna. The eccentric loops can be associated in pairs of non-adjacent loops in such a way as to generate electromagnetic fields of opposite phases in the respective pair. In this way, the two loops of a pair can be connected such that the same current flows through them in opposite trigonometric directions. A radiofrequency generator can supply first and second excitation signals alternately on two outputs, respectively to the central loop and to the eccentric loops.Type: ApplicationFiled: December 2, 2004Publication date: May 17, 2007Applicant: COMMISSARIAT A' ENERGIE ATOMIQUEInventors: Sylvain Bacquet, Thierry Thomas, Elisabeth Crochon, Francois Vacherand
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Publication number: 20050224707Abstract: Assembly of sensors formed as an imager with a detection brick including a photosensitive material, a brick for addressing and optionally processing signals from the sensor(s), an interconnection brick located between the detection brick and the addressing brick, this brick including connection pads, characterized in that the photosensitive material of the detection brick contains polymorphous silicon. The invention also relates to a method for the making of the latter.Type: ApplicationFiled: June 25, 2003Publication date: October 13, 2005Applicant: Commissariat A A'Energie AtomiqueInventors: Cyril Guedj, Jose Alvarez, Yvan Bonnassieux, Jean-Paul Kleider, Norbert Moussy, Pere Roca I Cabarrocas, Svetoslav Tchakarov