Abstract: A memory includes a memory cell including a planar electrode in a first plane; a floating electrode in a second plane, parallel to the first plane; a vertical electrode. The planar electrode includes a first part facing a first part of the floating electrode, the first part of the planar electrode and the first part of the second electrode being separated by a first layer of a first active material, the vertical electrode includes a part facing a second part of the floating electrode, the first part of the vertical electrode and the second part of the floating electrode being separated by a second layer of a second active material. The first active material forms a selector or a memory point and the second active material forms a memory point or a selector. The planar and floating electrodes not sharing any plane parallel to the first or second plane.

Abstract: A method for manufacturing a photovoltaic module having at least one photovoltaic cell includes a step of encapsulating the photovoltaic cell including the formation of a stack having the photovoltaic cell; an encapsulation film based on a polymer material cross-linked at least at its freezing point; and an adhesion layer based on a crosslinkable polymer material. The adhesion layer is configured to adhere the encapsulation film to the photovoltaic cell. The manufacturing method also includes a cross-linking step including cross-linking the crosslinkable polymer material of the adhesion layer.

Abstract: A method of analysis of defects of a type from among a plurality of types of defects between two samples based on an image of each sample characteristic of a type of defect from among the plurality of types of defects includes: for each sample, creating a minimap including bins and representative of a type of defect whose resolution is less than the image of the sample, each bin of the minimap being associated with pixels of the image of the sample and having a score dependent on the pixels and representative of the quantity of a type of defects; determining the distance between each minimap representing the same type or types of defects, the distance between two minimaps being defined as the minimum distance between two minimaps by considering the following transformations: a rotation and/or a symmetry so that each distance between two minimaps is associated with a transformation.

Abstract: Three-dimensional capacitive structures may be produced by forming a capacitive stack conformally over pores in a region of porous anodic oxide. The porous anodic oxide region is provided on a stack of electrically-conductive layers including an anodization-resistant layer and an interconnection layer. In the pores there is a position having restricted diameter quite close to the pore bottom. In a first percentage of the pores in the region of anodic oxide, a functional portion of the capacitive stack is formed so as to extend into the pores no further than the restricted-diameter position. Cracks that may be present in the anodization-resistant layer have reduced effect on the properties of the capacitive structure. Increased thickness of the anodization-resistant layer can be tolerated, enabling equivalent series resistance of the overall capacitive structure to be reduced.

Abstract: Device of the chip or electronic system-in-package type, comprising at least one element for protecting at least part of at least one face of the device, said protective element comprising at least: an attack detection element of the device comprising at least one GMI-effect electrically conductive material, and a magnetic field emitter to which said GMI-effect electrically conductive material is to be subjected, and wherein the GMI effect is to be achieved in said GMI-effect electrically conductive material when an exciting alternating electric current flows therethrough and when subjected to the magnetic field of the magnetic field emitter.

Abstract: A method for interrogating an electronic identity card by a terminal with a claim covering an identity attribute of the holder of this card. The terminal obtains an identity token of the CNIe then selects in a HD wallet an issuer account associated to the identity attribute covered by the claim. Afterwards, it forms a transaction including as arguments the identity token and the path in the arborescence of the wallet leading to the issuer account, this transaction then being transmitted to a blockchain. Afterwards, it is verified by consensus that the terminal is habilitated to issue a claim covering an identity attribute, and that the issuing address of the transaction corresponds to the identity attribute on which the terminal is habilitated to issue a claim.

Abstract: The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including: a) forming a first layer (6), of an alloy of the semiconductor and of tin; b) then, on the first layer, forming a second layer (8), of said metal; c) laser annealing the first layer and the second layer at an energy density between 0.1 and 2 J/cm2.

Abstract: A light distribution device, for distributing light rays from an ancillary light source onto a scene to be lighted. The device includes a planar waveguide, a recess in the planar waveguide for injecting light rays into the planar waveguide, and a through opening in the planar waveguide for extracting light rays from the planar waveguide. In this way, light can be distributed over a large area, homogeneously and with a thin, easily manufactured device.

Abstract: An optical fibre, for use in the field of distributed measurement of temperature or deformation by optical reflectometry in the frequency domain using the Rayleigh backscattered signal in the fibre, includes a core doped with nanoparticles for example formed from gold particles covered with zirconium oxide, and can be subjected to high temperatures during the measurement. A method for producing the optical fibre includes a step of heat treatment during which the optical fibre is subjected, for a duration of at least one hour, to a heat treatment temperature higher than a maximum temperature to which it will be subjected during a measurement.

Abstract: A flexible haptic interface defining a tactile surface able to be contacted by a user, the interface including a plurality of rigid tactile elements connected by a flexible support forming at least one hinge extending between at least two adjacent elements, and in contact with each element, at least one actuator, the actuators being arranged to transmit a mechanical excitation to the rigid tactile elements in order to drive in vibration the hinge situated between them with a vibration amplitude detectable by touch.

Abstract: A measurement core for measuring nuclear heating, the core extending in a longitudinal direction and having a main plane, includes at least: a first layer of material, forming a first sample; a first thin layer of electrical insulation on the first sample; a thin conductive layer forming a heating electrical resistor on the first layer of electrical insulation; and a second thin layer of electrical insulation on the heating electrical resistor. A calorimetric sensor includes: an outer jacket; a gas contained in the jacket; a measurement core disposed in the jacket; a link for holding the core in the jacket and transferring the heat between the core and the jacket; and temperature measurement capable of measuring the temperature at a hot point, and the temperature at a cold point.

Abstract: A resistive memory device including at least one first electrode based on a first metal and a second electrode based on a second metal, and a memory element in the form of a metal filament based on a third metal and inserted between the first and second electrodes, the memory element having a filament cross-section strictly smaller than the electrode cross-sections, wherein the third metal has a chemical composition, different from those of the first and second metals giving it an etching speed greater than those of the first and second metals, preferably such that the selectivity at the etching is greater than or equal to 3:1, vis-á-vis the first and second metals. A method for manufacturing such a device is also disclosed.

Abstract: The present invention relates to a method for managing radio resources in a cellular network. For each node of interest (Nj) of the network, a set (Vj(t)) of neighbouring nodes is determined. Each neighbouring node (Ni?Vj(t)) performs a local observation of its environment (oi(t,f)) and extracts thereform a plurality of radio characteristics, then encodes each of these radio characteristics in the form of a message (mi,jk(t,f)) which is transmitted to the node of interest. The node of interest then generates a local mapping (?jk(t,f)) of each radio characteristic by aggregating the messages encoding this characteristic. Afterwards, the different local mappings are fused using fusion parameters so as to provide a hybrid local mapping (?ja(t,f)) of the radio characteristics.

Abstract: A device for generating a supply or bias voltage and a clock signal for a synchronous digital circuit is provided. The device includes an oscillator circuit comprising a propagation path representative of a critical path of the circuit and which varies with a supply or bias voltage to the oscillator, and outputting a periodic signal, the frequency whereof depends on the propagation path delay; a resistive element; a switched capacitor coupled to the output of the oscillator such that the switching frequency thereof corresponds to the frequency of the periodic signal or to a multiple or divisor of this frequency; and an amplifier circuit outputting, from an output coupled to a power supply input or bias input of the oscillator, a voltage, the amplitude whereof is representative of a difference between the resistance R and the equivalent resistance of the switched capacitor.

Abstract: A method for forming at least one doped region of a transistor includes providing a stack having an insulating layer, an active layer, and a gate pattern having a first lateral flank and removing a first portion of the active layer not overlaid by the gate pattern and extending down to the gate pattern, at the edge of a second portion of the active layer overlaid by the gate pattern, so as to expose an edge of the second portion. The edge extends substantially in a continuation of the lateral flank of the gate pattern. The method also includes forming a first spacer having an L shape and having a basal portion in contact with the insulating layer and a lateral portion in contact with the lateral flank; forming a second spacer on the first spacer; removing the basal portion of the first spacer by selective etching with respect to the second spacer, so as to expose the edge of the second portion; and forming the doped region by epitaxy from the exposed edge.

Abstract: A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.

Abstract: The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

Abstract: A SiP-type electronic device, including an electronic chip provided with an electrical interconnection face; a redistribution layer electrically coupled to the electrical interconnection face of the chip; electrical connection elements electrically coupled to the chip by the redistribution layer which is arranged between the chip and the connection elements; a first metal layer arranged on the side of a second face of the chip and secured to this second face; an encapsulation material arranged around the chip, between the redistribution layer and the first metal layer; a second metal layer including a first face secured by direct bonding to the first metal layer; a substrate arranged against a second face of the second metal layer.

Abstract: An OPM sensor fastening system includes a support socket for positioning the sensor, the support socket having a base and a housing for accommodating a portion of the OPM sensor, and a locking part for locking the sensor in the support socket, the locking part having an open base suitable for accommodating the base of the socket, a housing for accommodating a portion of the OPM sensor, and a removable partition suitable for letting the OPM sensor pass. The locking part is configured to press-fittingly cooperate with the support socket so as to blockingly wedge the OPM sensor in the longitudinal position relative to the socket.

Abstract: A method for producing an individualization zone of a microelectronic chip having a first and a second electrical track level and an interconnection level having vias includes providing the first level and a dielectric layer, randomly depositing particles on the dielectric layer, depositing an etching mask on the dielectric layer and the particles, and planarizing, so as to obtain a composite layer including the particles. The method also includes forming a lithographic layer having opening patterns, etching the composite layer through the opening patterns to form mask openings, then etching the dielectric layer through the mask openings, so as to obtain functional via openings and degraded via openings, and filling the via openings so as to form the vias of the interconnection level, said vias including functional vias at the functional openings and malfunctional vias at the degraded openings.