Patents Assigned to Consorzio per la Ricerca Sulle Microelettronica nel Mezzogiorno
  • MOS transistors having vertical current flow
    Patent number: 6093948
    Abstract: The process provides first for the accomplishment of low-doping body regions at the sides and under a gate region and then the accomplishment of high-doping body regions inside said low-doping body regions and self-aligned with said gate region. There is thus obtained an MOS power transistor with vertical current flow which has high-doping body regions self-aligned with said gate region and with a reduced junction depth.
    Type: Grant
    Filed: August 5, 1994
    Date of Patent: July 25, 2000
    Assignees: Consorzio per la Ricerca Sulle Microelettronica nel Mezzogiorno, STMicroelectronics, s.r.l.
    Inventors: Raffaele Zambrano, Carmelo Magro