Abstract: A system for growing silicon crystal structures includes a housing defining a growth chamber and a feed system connected to the housing for delivering silicon particles to the growth chamber. The feed system includes a container for holding the silicon particles. The container includes an outlet for discharging the silicon particles. The feed system also includes a channel connected to the outlet such that silicon particles discharged from the container flow through the channel. The feed system further includes a separation valve connected to the channel and to the housing. The separation valve is configured such that a portion of the feed system rotates relative to the housing.

Abstract: A system for extracting liquid is provided. The system includes a vacuum source and a nozzle having a wettable plunger and a vacuum tube connected in flow communication with the vacuum source. When the plunger is partly submerged in the liquid and the vacuum source is actuated to initiate a flow of gas through the vacuum tube, droplets of the liquid separate from at least a portion of the unsubmerged part of the plunger and become suspended in the gas flow. The system also includes a cooling structure positioned adjacent to the vacuum tube to facilitate solidifying the droplets suspended in the gas flowing through the vacuum tube.

Abstract: Clamping assemblies for sealing an annular chamber and reaction chamber of a reactor system are disclosed. The clamping assemblies may include actuators that are symmetrically arranged in two or more independently controllable groups of actuators.

Abstract: A system for the production of a polycrystalline silicon product is disclosed. The system includes a reaction chamber, a susceptor, an induction unit, and a plurality of energy sources. The reaction chamber has a reactor wall, and the susceptor encircles the reactor wall. The induction heater surrounds the susceptor, and has multiple induction coils for producing heat in the susceptor. The coils are grouped into a plurality of zones. The plurality of energy sources supply electric current to the coils. Each energy source is connected with the coils of at least one zone.

Abstract: Methods for growing a reduced dislocation crystal ingot in an ingot growing system are disclosed. The system has a first crucible with a first base and a first sidewall extending upward from the first base to define an outer cavity. The method includes placing a weir in the outer cavity, placing a second crucible on the weir, placing feedstock material into the outer cavity, and melting the feedstock material to allow movement of the melt from the outer cavity inward of an intermediate cavity and into an inner cavity.

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.

Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.

Abstract: An apparatus for doping a melt of semiconductor or solar-grade material is provided. The apparatus includes a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck. The seed chuck defines a first end of the apparatus, and the seed crystal defines a second end of the apparatus. The seed crystal is configured to initiate crystal growth when placed in contact with the melt. The dopant container is positioned between the first end and the second end of the apparatus, and defines a reservoir for holding dopant therein. The dopant container is configured to dispense liquid dopant into the melt when positioned proximate the melt. The dopant container and the seed crystal are connected to the seed chuck simultaneously.

Abstract: Methods for separating halosilanes that involve use of a distillation column having a partition that divides the column into portions for producing three product fractions are disclosed. Methods and systems for producing silane by disproportionation of halosilanes that use such columns and methods for producing polycrystalline silicon are also disclosed.

Abstract: Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.

Abstract: A gas decomposition reactor for the decomposition of a gas into a mixture of solid and gaseous by-products is disclosed. The gas decomposition reactor includes a reactor vessel, a Raman spectrometer, and a processor. The reactor vessel has an inlet for receiving inlet gas and an exhaust outlet for releasing exhaust gas. The Raman spectrometer is connected with the exhaust outlet for determining a chemical conversion within the reactor chamber and generating a corresponding signal. The processor is connected with the Raman spectrometer to receive the signal from the Raman spectrometer. The processor is capable of comparing the signal with a set of values and calculating differences between the signal and the set of values. The processor is connected with the inlet to regulate a flow of the inlet gas.

Abstract: A fluidized bed reactor includes a reactor core and a stack of liner segments. The stack includes a first liner segment and a second liner segment. The first liner segment includes a first edge having a base surface and an angled surface. The base surface and the angled surface form an obtuse angle. The second liner segment includes a second edge. The first edge and the second edge form a shiplap joint to connect the first liner segment to the second liner segment.

Abstract: A method of improving the operation of polysilicon fluidized bed reactors is disclosed. The present disclosure is directed to the optimization of axial temperature gradients in gas-solid fluidized bed systems. Varying the width of the particle size distribution in the reactor alters the temperature gradient within the reactor, thereby providing a means of a better control of internal temperature profiles and hence better reactor performance.

Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.

Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.

Abstract: A crystal puller for growing a crystal ingot includes a housing, insulation, a crucible assembly, a heat shield, and a dust barrier. The housing encloses a growth chamber, and has an upper wall with an inner surface and an aperture. The insulation separates an inside of the housing into an upper area and a lower area, and has a central opening. The crucible assembly is within the lower area to contain the melt. The heat shield is adjacent the central opening of the insulation, and forms a labyrinth gas path with the crucible assembly. The dust barrier extends from the inner surface of the upper wall to one of the insulation and the heat shield, and forms a seal with the upper wall around the aperture to inhibit particles from entering the growth chamber through the upper area of the housing.

Abstract: A method of growing a monocrystalline silicon ingot is described. The method includes the steps of providing a monocrystalline ingot growing apparatus including a chamber having an internal pressure, and a crucible disposed within the chamber, preparing a silicon melt in the crucible, introducing an inert gas into the chamber from a gas inlet above the silicon melt, wherein the inert gas flows over the surface of the silicon melt and has a flow rate, introducing a volatile dopant including indium into the silicon melt, growing an indium-doped monocrystalline silicon ingot, and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber.

Abstract: Methods for purifying a halosilane-containing process stream include a process stream purified by removing arsenic and phosphorous impurities by use of distillation.