Abstract: A gas handling manifold for use in metal-organic chemical vapor deposition systems, the manifold having a radial configuration with each vent/run valve equidistant from the center. Ensuring that gases switched simultaneously arrive in a reactor vessel substantially simultaneously, alleviating problems caused by intermediate reactions in the manifold. The manifold has minimal unflushed area (dead volumes) allowing incompatible materials to be handled in tandem.
Type:
Grant
Filed:
August 28, 1987
Date of Patent:
September 26, 1989
Assignees:
Plessey Overseas Limited, Cryogenic and Vacuum Technology Limited