Abstract: A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8).

Abstract: The invention relates to the production of a cable rotating head, which is devoid of an abrasion ring, for a Czochralski-crystal drawing system which is used to drive a drawing cord in an azimuthal and vertical manner and the nucleus of a crystal is fixed therein. According to the invention, the cord rotating head comprises a cord winding mechanism which can be supported by a vertical hollow shaft, through which the drawing cord is suspended in the crystal drawing system, and the cord rotating head is rotationally mounted about the axis thereof and can be offset by a rotation motor, which is secured to the crystal drawing system, together with the cord winding mechanism and the drawing cord in a rotational movement, and said vertical hollow shaft is surrounded in a coaxial manner by a double toothed gear which is rotationally mounted opposite to the hollow shaft and can be driven by a drawing motor which is secured to the crystal drawing system.

Abstract: This invention is based on the problem of achieving the most planar possible phase boundary extending in the horizontal direction between the still molten material and the material that has already crystallized out in a vertical Bridgman crystal-growing furnace or vertical gradient freeze crystal-growing furnace for crystallizing out the semiconductor melt and doing so at a low cost. Therefore, jacket heaters are provided coaxially with the furnace core containing the crucible and measurement devices for determining radial temperature differences in the space between the jacket heaters and the crucible, whereby the heat output of the jacket heaters is adjusted so that the measured temperature differences become zero. Thus, at least in the planes in which the measurement devices are located, radial heat transport is prevented and a phase boundary that is not curved is implemented.

Abstract: The invention relates to producing a melt that is as homogeneous as possible, to which fresh material in the form of granulate is continuously supplied. Since the granulate is cooler than the melt, heat sinks form that are especially pronounced when the granulate forms clumps in the melt. Therefore, the invention relates to a means for distributing the granulate. In one aspect, the means are inductors arranged outside the melting crucible that generate an alternating magnetic field in the melt. In this way, electrical currents are induced there that, in turn, cause the material flows. In one aspect, the inductors are arranged and controlled in such a way that a rapid distribution of the granulate is effected and thus its rapid melting. In this way, good homogeneity is achieved, especially in the center of the melt where the removal of the melted material also occurs.

Abstract: The invention presented here relates to a crystal growing equipment. It is equipped in general with a resistance heater for heating a melt (13) as well as with field coils, which generate alternating magnetic field in a crucible, with which flows can be induced in the melt (13). The invention is so designed that the resistance heaters are also devised to function as the field coils, that is, they are built of a hollow cylindrical body (1), in which, by means of a surrounding slit (2) which winds around it, a spiral-shaped single layer current path is formed. This has the advantage that the current needed for the electrical heating in the equipment is also used for the generation of the magnetic field. Thus, neither separate field coils nor a separate current supply is necessary. Further, the resistance heater, which serves as the field coil arranged as a coil array, is high temperature resistant and surrounds the immediate hot core zone of the equipment and thus the region of the melt.

Abstract: A process for calibrating the temperature control unit of a vertical gradient freeze crystal growth oven, instead of the fused material a test body (3) is used in the oven (1) that does not melt at the oven temperature, that has a heat conductivity comparable to the fused material and a central bore (4). After turning on the resistance heaters (8, 9, 10) of the oven (1) the temperature at the level of the individual control temperature indicators (11, 12, 13) of the oven (1) is measured via a reference temperature indicator (5) that can be fully inserted into the bore (4) and subsequently the output of the respective resistance heaters (8, 9, 10) is set to a desired temperature value.

Abstract: The invention relates to a method and to a device for supporting a crystal ingot while pulling a single crystal, in particular such a crystal composed of silicon, according to the Czochralski method. To this end, a crystal support is provided which engages with a specialized bead, which is formed on the neck of the single crystal ingot and which has the shape of a bicone, by means of bearings in a housing. A support of the crystal ingot is thus achieved which may be disengaged at any time, and which has no disruptive effects on crystal growth and which acts independently of the length of the grown crystal. The bearings are moved into the support position on the bicone by a central pulling element which can be independently displaced relative to a second pulling element.