Abstract: Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time.
Type:
Application
Filed:
February 29, 2008
Publication date:
September 11, 2008
Applicants:
Electronics and Telecommunications Research Institute, Cungbuk National University Industry Academic Cooperation Foundation
Inventors:
Byoung-Gon YU, Byung-Do Yang, Seung-Yun Lee, Sung-Min Yoon, Young Sam Park, Nam Yeal Lee