Patents Assigned to Cypress Semicondutor Corporation
  • Patent number: 8103496
    Abstract: A breakpoint control mechanism for an In-Circuit Emulation system. Break bits are assigned to each instruction address and stored in a lookup table within a base station containing a virtual microcontroller. As a program counter increments, a determination is made as to whether or not a break is to occur by reading the break bit from the lookup table. When a break is to occur, a breakpoint controller issues a break command over an interface to an actual microcontroller under test, thus freeing the microcontroller under test from having to include a look-up table on board for a breakpoint control or otherwise provide specifically for breakpoint control.
    Type: Grant
    Filed: November 1, 2001
    Date of Patent: January 24, 2012
    Assignee: Cypress Semicondutor Corporation
    Inventors: Steve Roe, Craig Nemecek
  • Patent number: 6667642
    Abstract: A method and circuit for reducing the power up time of a phase lock loop (PLL). In one embodiment, the present invention cuts off a first voltage to the phase lock loop thereby powering down the phase lock loop. In power down, a second voltage is utilized to maintain the power requirements of the filter node within the phase lock loop while the other components of the phase lock loop are powered down. The PLL is now in a power down mode. The present invention then restores the first voltage to the PLL. Once the internal components of the PLL stabilize, the second voltage is disengaged from the filter node wherein the phase lock loop is powered up to operational power.
    Type: Grant
    Filed: September 18, 2002
    Date of Patent: December 23, 2003
    Assignee: Cypress Semicondutor Corporation
    Inventor: Nathan Moyal
  • Patent number: 6005795
    Abstract: A single ended dual port memory cell is described. A bit of data received from one of the first and second ports can be stored. Each of the first and second ports can simultaneously detect the stored bit.A method of reading the contents of a dual port memory cell which has a Beta Ratio less than 1.5 is also described. A wordline is associated with a selected port of the memory cell. The wordline is coupled to a gate device of the memory cell for controlling communication between the memory cell and a bitline. The gate device has a first conductance at a first wordline voltage and a second conductance at a second wordline voltage. The second conductance is less than the first conductance. A port of the cell is selected by applying a select voltage to the associated wordline. The select voltage is approximately the same as the second wordline voltage. The cell contents are then retrieved from the bitline.
    Type: Grant
    Filed: January 30, 1997
    Date of Patent: December 21, 1999
    Assignee: Cypress Semicondutor Corporation
    Inventors: Andrew L. Hawkins, Stefan P. Sywyk