Patents Assigned to Cypress Seminconductor Corp.
  • Patent number: 6501696
    Abstract: A method for reading a memory cell comprising the steps of (A) raising a voltage level of a bitline of the memory cell above a predetermined level, (B) detecting a current flow generated on the bitline in response to the raised voltage level, and (C) coupling one or more sense nodes coupled to the bitline to a ground potential when the current flow is above a predetermined magnitude.
    Type: Grant
    Filed: May 15, 2001
    Date of Patent: December 31, 2002
    Assignee: Cypress Seminconductor Corp.
    Inventors: Thomas M. Mnich, John Eric Gross