Abstract: The present invention discloses a cooling trough comprising an unflat surface, surrounding an opening of the cooling trough, configured with a height essentially decreasing inwardly. At least one supporting line, running around the opening of the cooling trough, is formed on the unflat surface. The at least one supporting line contacts a baseplate of a power module after the baseplate is attached to the unflat surface of the cooling trough. In addition, the present invention also discloses a cooler comprising the cooling trough and a power module assembly comprising the cooler.

Abstract: A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal molded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal molded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal molded body.

Abstract: The invention relates to a method for connecting a power semi-conductor chip having upper-sided potential surfaces to thick wires or strips, consisting of the following steps: Providing a metal molded body corresponding to the shape of the upper-sided potential surfaces, applying a connecting layer to the upper-sided potential surfaces or to the metal molded bodies, and applying the metal molded bodies and adding a material fit, electrically conductive compound to the potential surfaces prior to the joining of the thick wire bonds to the non-added upper side of the molded body.

Abstract: Sintering tool (10) with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (20), arranged at two locations opposite the cradle, for fixing a protective film (30) covering the electronic subassembly (BG).

Abstract: The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal molded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the molded body used according to the method for contacting are selected corresponding to the magnitude.

Abstract: The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal molded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the molded body used according to the method for contacting are selected corresponding to the magnitude.

Abstract: The invention relates to a method for producing a connection between a semiconductor component and semiconductor component and semiconductor module resistant to high temperatures and temperature changes by means of a temperature impinging process, wherein a metal powder suspension is applied to the areas of the semiconductor module to be connected later; the suspension layer is dried, outgassing the volatile components and generating a porous layer; the porous layer is pre-sealed without complete sintering taking place throughout the suspension layer; and, in order to obtain a solid electrically and thermally conductive connection of a semiconductor module to a connection partner from the group of: substrate, further semiconductor or interconnect device, the connection is a sintered connection generated without compression by increasing the temperature and made of a dried metal powder suspension that has undergone a first transport-safe contact with the connection partner in a pre-compression step and has bee

Abstract: Method of manufacturing sinterable electrical components for jointly sintering with active components, the components in planar shape being provided with at least one planar lower face meant for sintering, and an electrical contact area on the face opposite to the sintering face being available in the form of a metallic contact face, whose upper side is contactable by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting, the component being a temperature sensor, whose lower face is provided with a sinterable metallization on a ceramic body, said ceramic body having two electrical contact faces for continued electrical connection.

Abstract: The invention relates to a method for connecting a power semi-conductor chip having upper-sided potential surfaces to thick wires or strips, consisting of the following steps: Providing a metal moulded body corresponding to the shape of the upper-sided potential surfaces, applying a connecting layer to the upper-sided potential surfaces or to the metal moulded bodies, and applying the metal moulded bodies and adding a material fit, electrically conductive compound to the potential surfaces prior to the joining of the thick wire bonds to the non-added upper side of the moulded body.

Abstract: The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal moulded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the moulded body used according to the method for contacting are selected corresponding to the magnitude.

Abstract: A method of manufacturing a semiconductor component includes the steps of manufacturing of a wafer, applying structures of components on the wafer to form a wafer assembly, applying a metal coating on the wafer, removing the metal coating in non-contact areas of the components, applying surrounds on the edge areas of the components, arranging the wafer on a foil held by a clamping ring, separating the components of the wafer compound carried by the foil from one another, arranging a covering mask on the areas of the separated components carried by the foil which are not to be coated, applying a metal coating on the separate components covered with the mask, removal of the mask, and removal of the components from the foil and further processing the separate components wherein that applying a metal coating on the separate components covered by the mask takes place by means of thermal spraying.

Abstract: Method for manufacturing a rigid power module with a layer that is electrically insulating and conducts well thermally and has been deposited as a coating, the structure having sprayed-on particles that are fused to each other, of at least one material that is electrically insulating and conducts well thermally, having the following steps: manufacturing a one-piece lead frame; populating the lead frame with semiconductor devices, possible passive components, and bonding corresponding connections, inserting the thus populated lead frame into a compression mold so that accessibility of part areas of the lead frame is ensured, pressing a thermosetting compression molding compound into the mold while enclosing the populated lead frame, coating the underside of the thus populated lead frame by thermal spraying in at least the electrically conducting areas and overlapping also the predominant areas of the spaces, filled with mold compound.

Abstract: The invention provides a fluid cooling system comprising a heat exchanger with an outer wall forming a chamber with an inlet and an outlet for circulating a heat exchange medium in the chamber. The chamber has an opening towards the component which is to be cooled, and to protect the component, the opening is closed by a flexible wall which is attached to the outer wall. To protect the cover and the component against overload, the flexible wall is attached to an inner wall inside the chamber. The cooling system could be applied to electronic systems, e.g. for cooling a DCB substrate or similar electronic components.

Abstract: The invention relates to a cooling device for a plurality of power modules (16), comprising a heat-conducting body (15) through which a coolant flows. The cooling device comprises external cooling ribs (14) on a first housing shell of the body through which a coolant flows for receiving the plurality of power modules adjacent to each other. Each individual cooling rib is aligned to come into fixed heat-conducting contact on at least one upper or lower side of one of the plurality of power modules, and the housing shell, on the inner side in the region of the respective cooling rib(s), comprises means for the fluidic communication with the volume of the coolant in the inside the body through which the coolant flows.

Abstract: A flow distributor for distributing a flow of fluid through a cooling body, the flow distributor comprising: an inlet manifold; an outlet manifold; and one or more flow cells, each being arranged to fluidly interconnect the inlet manifold and the outlet manifold, each flow cell comprising a cell inlet in fluid communication with the inlet manifold, a cell outlet in fluid communication with the outlet manifold, and a flow channel for guiding a flow of fluid from the cell inlet to the cell outlet, wherein the flow distributor is formed within a solid layer which is bonded directly to an insulating layer to be cooled.

Abstract: A method of manufacturing a semiconductor component includes the steps of manufacturing of a wafer, applying structures of components on the wafer to form a wafer assembly, applying a metal coating on the wafer, removing the metal coating in non-contact areas of the components, applying surrounds on the edge areas of the components, arranging the wafer on a foil held by a clamping ring, separating the components of the wafer compound carried by the foil from one another, arranging a covering mask on the areas of the separated components carried by the foil which are not to be coated, applying a metal coating on the separate components covered with the mask, removal of the mask, and removal of the components from the foil and further processing the separate components wherein that applying a metal coating on the separate components covered by the mask takes place by means of thermal spraying.

Abstract: A method for the low-temperature pressure sintering of at least one electronic unit to be contacted thermally, firmly connected mechanically, and located on a substrate, comprising the following steps: pressing the electronic unit using a mold enveloping matrix while sparing a connecting surface of the substrate for a heat sink connection, providing a heat sink plate, applying a sintering connecting layer onto the spared region of the connecting surface and/or onto to the region of the heat sink plate provided for contacting, and bonding of the heat sink plate to the substrate of the electronic unit in the region of the connecting surface using silver low-temperature pressure sintering technology.

Abstract: The invention relates to a method for producing a connection between a semiconductor component and semiconductor component and semiconductor module resistant to high temperatures and temperature changes by means of a temperature impinging process, wherein a metal powder suspension is applied to the areas of the semiconductor module to be connected later; the suspension layer is dried, outgassing the volatile components and generating a porous layer; the porous layer is pre-sealed without complete sintering taking place throughout the suspension layer; and, in order to obtain a solid electrically and thermally conductive connection of a semiconductor module to a connection partner from the group of: substrate, further semiconductor or interconnect device, the connection is a sintered connection generated without compression by increasing the temperature and made of a dried metal powder suspension that has undergone a first transport-safe contact with the connection partner in a pre-compression step and has bee

Abstract: A distributor (1) for distributing a flow of cooling fluid over one or more surface(s) (3) to be cooled has a housing (13) that may be manufactured in a single piece together with inlet (8) and outlet (9) manifolds and a plurality of flow cells (26, 27, 28, 29). The flow cells (26, 27, 28, 29) may be connected in parallel between the manifolds (8, 9), and may be adapted to cool multiple surfaces (3) simultaneously. The present invention is also directed to a fluid-coolable unit comprising a distributor (1) for removing heat from an electronic circuit, such as integrated circuit or CPU.

Abstract: Method for manufacturing a rigid power module with a layer that is electrically insulating and conducts well thermally and has been deposited as a coating, the structure having sprayed-on particles that are fused to each other, of at least one material that is electrically insulating and conducts well thermally, having the following steps: manufacturing a one-piece lead frame; populating the lead frame with semiconductor devices, possible passive components, and bonding corresponding connections, inserting the thus populated lead frame into a compression mould so that accessibility of part areas of the lead frame is ensured, pressing a thermosetting compression moulding compound into the mould while enclosing the populated lead frame, coating the underside of the thus populated lead frame by thermal spraying in at least the electrically conducting areas and overlapping also the predominant areas of the spaces, filled with mold compound.