Abstract: The present disclosure relates to an insulated gate bipolar transistor (IGBT) and, more particularly, to an insulated gate bipolar transistor, in which a barrier region is in a mesa between adjacent trench gates to divide the width of the mesa, thereby inducing the accumulation of hole carriers, and thus reducing an on-resistance (e.g., of the IGBT).

Abstract: A back plate is disposed in a vibration area of a MEMS microphone. The back plate includes a central area located at a central portion of the back plate and having a plurality of acoustic holes formed therein, and a peripheral area located to surround the central area. The acoustic holes are arranged to be spaced apart from each other by the same interval.

Abstract: Provided is an RF switch device (100) in which body contact regions (190) are formed at respective positions adjacent to or partially overlapping opposite ends of a gate region (110) so that holes in a body of the device can escape or flow in either or both of two directions, rather than in only a single direction.

Abstract: A backside illuminated image sensor includes a substrate having a frontside surface, a backside surface and a recess formed in a backside surface portion thereof, pixel regions disposed in the substrate, an insulating layer disposed on the frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, and a second bonding pad disposed in the recess and electrically connected with the bonding pad.

Abstract: The present invention relates to an insulated gate bipolar transistor (IGBT) and, more particularly, to an insulated gate bipolar transistor that has multiple mesas having different widths, configured to promote the buildup and accumulation of hole carriers, thereby facilitating relatively easy subsequent processing, while maximizing conductivity modulation.

Abstract: A super junction semiconductor device includes a substrate having a first conductive type, a blocking layer positioned on the substrate, the blocking layer including first conductive type pillars and second conductive type pillars, each extending in a vertical direction and arranging alternatively in a horizontal direction, and a gate structure disposed on the blocking layer, the gate structure extending in the horizontal direction and being electrically connected to ones of the first and second conductive type pillars. Thus, oscillation phenomena may be suppressed.

Abstract: A lateral double diffused metal oxide semiconductor (LDMOS) transistor and a semiconductor can reduce the size of the entire power block and can decrease costs by preventing formation of an edge termination region between adjacent device tips or ends along a width direction when the corresponding LDMOS transistor cell has a limited width and the LDMOS transistor is a multi-finger LDMOS transistor.

Abstract: A backside illuminated image sensor includes a substrate having a frontside surface, a backside surface and a recess formed in a backside surface portion thereof, pixel regions disposed in the substrate, an insulating layer disposed on the frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, an anti-reflective layer disposed on the backside surface of the substrate, and a second bonding pad disposed in the recess and electrically connected with the bonding pad. The anti-reflective layer includes a metal oxide layer disposed on the backside surface of the substrate, a first silicon insulating layer disposed on the metal oxide layer, and a second silicon insulating layer disposed on the first silicon insulating layer. The second silicon insulating layer includes a first portion disposed on an inner side surface of the recess and a second portion disposed on a bottom surface of the recess.

Abstract: A MEMS microphone includes a substrate defining a cavity, a diaphragm being spaced apart from the substrate, covering the cavity, and being configured to generate a displacement thereof in response to an applied acoustic pressure, an anchor extending from an end portion of the diaphragm, the anchor including a lower surface in contact with an upper surface of the substrate to support the diaphragm, a back plate disposed over the diaphragm, the back plate being spaced apart from the diaphragm such that an air gap is maintained between the back plate and the diaphragm, and defining a plurality of acoustic holes and an upper insulation layer provided on the substrate, covering the back plate, and holding the back plate to space the back plate from the diaphragm, the upper insulation layer having a flat plate shape to prevent sagging of the back plate.

Abstract: A MEMS microphone includes a substrate presenting a vibration area, a supporting area surrounding the vibration area and a peripheral area surrounding the supporting area, the substrate defining a cavity formed in the vibration area, a lower back plate being disposed over the substrate to cover the cavity and having a plurality of lower acoustic holes, a diaphragm being disposed over the lower back plate, the diaphragm being spaced apart from the lower back plate and configured to generate a displacement thereof in response to an applied acoustic pressure, an upper back plate being disposed over the diaphragm, the upper back plate being spaced apart from the diaphragm and having a plurality of upper acoustic holes, and an intermediate anchor being in contact with an upper surface of the lower back plate in the supporting area, the intermediate anchor being configured to support the diaphragm to space the diaphragm from the lower back plate, and to provide elasticity for the diaphragm.

Abstract: An X-ray sensor includes a substrate, a photodiode disposed in the substrate, a reset transistor connected with the photodiode, a source follower transistor connected with the photodiode, and a select transistor connected with the source follower transistor. The photodiode includes a plurality of charge accumulation layers disposed in the substrate and arranged in a direction perpendicular to a surface of the substrate, a plurality of pinning layers disposed on the charge accumulation layers, respectively, and a well region for electrically connecting the charge accumulation layers with the reset transistor and the source follower transistor.

Abstract: An organic light emitting display device in which a sidewall of a reflective metal layer in a blue pixel region is covered with an inorganic film and in which the reflective metal layer is thus prevented from being damaged or rendered defective when performing subsequent processes, such as etching and cleaning, for forming an anode on the reflective metal layer.

Abstract: Disclosed is a backside illuminated image sensor and a method of manufacturing the same and, more particularly, a backside illuminated image sensor and a method of manufacturing the same, in which a height difference is between a pixel region and a surrounding region having a boundary between on an uppermost or back surface of a substrate, thereby eliminating one or more problems that occur when a thickness of a color filter in the pixel region is uneven.

Abstract: A voltage on-off detector includes an inverter between a first voltage source and a third voltage source providing a third voltage and having an input terminal that receives a second voltage, a first transistor having a gate that receives the second voltage, and a first source and a first drain between the third voltage source and a first node, a second transistor having a second gate that receives the third voltage, and a second source and a second drain between a second voltage source providing the second voltage and the first node, and an amplifier configured to output a first voltage from the first voltage source or a voltage on the first node based on or in response to an output of the inverter.

Abstract: A MEMS microphone includes a substrate defining a cavity including a first sidewall extending a vertical direction, a back plate disposed over the substrate and defining a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, the diaphragm having at least one vent hole, an anchor extending from a circumference of the diaphragm to connect an end portion of the diaphragm to an upper surface of the substrate, and at least one path member communicating with the vent hole, the path member providing a flow path for the acoustic pressure to flow downwardly toward the cavity.

Abstract: An anode structure includes an insulating interlayer pattern disposed on a substrate, the insulation interlayer pattern including a lower metal pattern for each of cell regions and via contacts extending in a vertical direction and being connected to the lower metal patterns therein, respectively, cell isolation pillars disposed on the insulation interlayer pattern, each of the cell isolation pillars extending in the vertical direction to electrically isolate the plurality of cells regions from one another, a reflective layer pattern disposed on the insulating interlayer pattern and between the cell isolation pillars, and an anode pattern disposed on the reflective layer pattern, the anode pattern being electrically connected to each of the via contacts through the reflective layer pattern.

Abstract: An output amplifier includes an input unit including first and second input transistors, and a first bias transistor between a connection node of a source of the first input transistor and a source of the second input transistor and a first voltage source, a first current mirror including first and second transistors connected in series at a first connection node and between a second voltage source and a second connection node, and third and fourth transistors connected in series at a third connection node and between the second voltage source and a fourth connection node, and a second current mirror including fifth and sixth transistors between a fifth connection node and the first voltage source and connected in series at a sixth connection node, and seventh and eighth transistors between a seventh connection node and the first voltage source.

Abstract: A bipolar junction transistor, a BiCMOS device including same, and a method of manufacturing the BiCMOS device are disclosed. To fabricate the BiCMOS device, a bipolar region and a CMOS region are on a lightly doped substrate to enhance isolation between devices. First-conductivity-type deep well regions are in the bipolar region and/or the CMOS region to prevent well-to-substrate diffusion.

Abstract: A MEMS microphone includes a first dummy pad elevating a circumferential portion of an intermediate insulation layer adjacent to a second pad electrode, a second dummy pad elevating a first circumferential portion of an upper insulation layer adjacent to the second pad electrode, and a third dummy pad elevating a second circumferential portion of the upper insulation layer adjacent to the first pad electrode. Thus the first circumferential portion of the upper insulation layer is elevated relative to an upper surface of the second pad electrode, and the second circumferential portion of the upper insulation layer is elevated relative to an upper surface of the first pad electrode.

Abstract: A voltage on-off detector includes an inverter between a first voltage source and a first node and having an input terminal that receives a third voltage, a first transistor having a first gate, and a first source and a first drain between the first node and a second voltage source, a second transistor having a second source connected to the second voltage source, and a second gate and a second drain connected to the first node, and an amplifier having an input terminal connected to an output terminal of the inverter and configured to output a first voltage from the first voltage or a second voltage from the second voltage source based on or in response to an output of the inverter.