Abstract: A method of decoding an array of multi-dimensional code components, the method may include searching in a group of multi-dimensional code components a suspected multi-dimensional code component, wherein the suspected multi-dimensional code component belongs to the array multi-dimensional code components and is associated with a false correction probability that exceeds a false correction threshold; wherein the searching comprises dummy decoding, by a decoder, the group of multi-dimensional code components; and performing at least one non-dummy decoding of multi-dimensional code components of the array without performing non-dummy decoding of the suspected multi-dimensional code component.

Abstract: A method of managing a non-volatile memory module, the method may include: allocating, by a memory controller, logically erased physical blocks of a non-volatile memory module to a spare block pool; allocating, by the memory controller, physical blocks from the spare block pool to become buffer blocks of a buffer of the non-volatile memory module; and controlling, by the memory controller, a utilization of the buffer blocks of the buffer by applying a page based buffer management scheme.

Abstract: A system, computer readable medium and a method for multi-dimensional decoding.

Abstract: A method, non-transitory computer readable medium and a system for managing a non-volatile memory device. The method includes receiving data sectors; writing the data sectors into a buffer of the non-volatile memory device; maintaining at least one management data structure that comprises (a) location metadata about a location of each data sector in the buffer (b) timing metadata for each memory space portion that includes at least one data sector that is currently buffered in the buffer, selecting a selected buffer block in response to the location metadata and the timing metadata; and merging, before the buffer becomes full, data sectors of all of the at least one certain memory space portion into a sequential portion of the non-volatile memory device thereby emptying the selected buffer block, wherein the sequential portion differs from the buffer.

Abstract: A method for converting a measured physical level of a cell into a logical value, in an array of memory cells storing physical levels which diminish over time, the method may include: determining extent of deterioration of the physical levels and determining thresholds accordingly for at least an individual cell in the array; and reading the individual cell including reading a physical level in said cell and converting said physical level into a logical value using at least some of said thresholds, wherein said determining extent of deterioration comprises storing predefined physical levels rather than data-determined physical levels in each of a plurality of cells and determining extent of deterioration by computing deterioration of said predefined physical levels.

Abstract: A system and method for analog encryption and decryption, in which the encryption and encoding processes are interrelated, such that by failing to decrypt the retrieved data, decryption fails.

Abstract: A non-transitory computer readable medium that stores instructions for: reading a first group of flash memory cells using a reference read threshold to obtain multiple read results; processing the multiple read results by performing at least one out of calculating a distribution of values of the multiple read results and counting a number of read results of a certain value; estimating at least one actual read threshold to be used during future read attempts in response to at least one out of (i) the number of read results of the certain value and (ii) distribution information about a distribution of values of the read results; and reading a second group of flash memory cells using the at least one actual read threshold to provide actual read results.

Abstract: Systems, computer readable media and methods for updating a flash memory device involve procedures for transferring, from a flash memory device to an external controller, only a portion of a data entity; and determining, by the external controller, based upon the portion of the data entity, whether to complete a copy back operation of the data entity or to correct errors of the data entity. If it is determined to correct errors of the data entity, then the procedure includes (a) completing a transfer of the data entity to the external controller; (b) error correcting the data entity to provide an amended data entity; and (c) writing the amended data entity to the flash memory device. If, however, it is determined to complete the copy back operation then the procedures includes completing the copy back operation of the data entity by transferring the data entity within the flash memory device.

Abstract: A method, device and computer readable medium for programming a nonvolatile memory block. The method may include programming information, by a memory controller, to the nonvolatile memory block by performing a sequence of programming phases of descending bit significances. The device may include a nonvolatile memory block; and a memory controller that may be configured to determine a bit significance level of the nonvolatile memory block; program the nonvolatile memory block by performing at least one programming phase; and program the nonvolatile memory block to an erase value that may be higher than the pre-erase value; wherein the erase value and the pre-erase value may be selected based on the bit significance level of the nonvolatile memory block. The method may include packing three single level cell (SLC) nonvolatile memory blocks to one three-bit per cell nonvolatile memory block in order of the three SLC bit significances.

Abstract: A method for using a single spare block pool in flash memory comprising: allocating a plurality of flash memory arrays, wherein each flash memory array comprises a plurality of flash memory blocks; within a main flash memory array: allocating a used block pool comprising a plurality of used blocks and allocating a main spare block pool comprising a plurality of spare blocks; within each of the other flash memory arrays: allocating a used block pool comprising multiple used blocks; allocating a minimum spare block pool comprising a minimum number of spare blocks; allocating the main spare block pool and each of the minimum spare block pools to a single spare block pool; transferring a spare block from the main spare block pool to one of the minimum spare block pools; and transferring a spare block from a first minimum spare block pool to a second minimum spare block pool.

Abstract: A method, a computer readable medium and a system for managing flash memory. The method may include receiving multiple data sectors from an interface; writing the multiple data sectors into a data buffer that is nonvolatile; creating a pointer in a data management structure that is stored in a metadata buffer that is nonvolatile, for each data sector corresponding to a storage location of the data sector in the data buffer; if a predefined condition is reached, merging data sectors stored in the data buffer with data sectors that are already stored in a sequential nonvolatile portion of the flash memory device, wherein the sequential nonvolatile portion differs from the data buffer.

Abstract: A system, a method and a non-transitory computer readable medium for generating soft information. The method may include performing a first set of read attempts of flash memory cells using a first set of read thresholds to provide first read results; calculating for each flash memory cell in response to the first read results, first cell information indicative of a first change-inducing read threshold; performing a second set of read attempts of the flash memory cells using a second set of read thresholds to provide second read results, calculating for each flash memory cell in response to the second read results, second cell information indicative of a second change-inducing read threshold; and generating, for each flash memory cell soft information in response to the first cell information and the second cell information of the flash memory cell.

Abstract: A flash memory controller, a non-transitory computer readable medium and a method for performing operations with a flash memory device, the method may include receiving, by a flash memory controller, a request to perform a requested operation with the flash memory device; selecting multiple selected instructions to be executed by a programmable module of the flash memory controller, based upon (a) an interface specification supported by the flash memory device and (b) the requested operation; wherein the programmable module comprising multiple operation phase circuits; and executing the multiple selected instructions by the programmable module, wherein the executing of the multiple selected instructions comprises executing a plurality of selected instructions by multiple operation phase circuits; wherein different operation phase circuits are arranged to execute different operation phases of the requested operation.

Abstract: A computer readable medium, a system and a method for flash memory device parameter optimization, the method may include: receiving or generating an estimate of a wear level of at least one group of flash memory cells of the flash memory device, and finding erase parameters and programming parameters to be applied on one or more groups of flash memory cells of the flash memory device in response to estimate of the wear level.

Abstract: A flash memory controller, a computer readable medium and a method. The method may include performing, by a flash memory controller, multiple read attempts of a group of flash memory cells, using multiple read thresholds, to provide multiple read results; determining, by the flash memory controller and based upon the multiple read results, a reliability metric of each of the multiple read results; and error correction decoding the multiple read results based upon reliability metrics associated with the multiple read results.

Abstract: A system and method for unbiased rounding away from, or toward, zero by truncating N bits from a M bit input number to provide a M?N bit number, and adding the equivalent value of ‘½’ to the M?N bit number unless the input number is negative, or positive, respectively, and the N truncated bits represent exactly ½. The method for rounding away from zero may include outputting a (M?N) bit truncated number if the M-bit input number is negative and the sequence of N truncated bits comprises a most significant bit of 1, followed by zeros; and otherwise, computing and outputting a sum of (a) a number that has an equivalent value of one followed by (N?1) replicas of zero, the one provided by applying a logical operation on the most significant bit of the sequence of truncated bits and (b) the (M?N) bit truncated number.

Abstract: A system and method for reading memory cells in a multi-level cell memory device. A set of thresholds may be received for reading a current page of the memory cells. The set of threshold may include hard decision thresholds for hard decoding, soft decision thresholds for soft decoding, erase thresholds for erase decoding and/or other combinations of thresholds. The set of thresholds may be divided into a plurality of groups of thresholds. The current page may be simultaneously read using multiple thresholds, where each of the multiple thresholds is divided into a different group of thresholds.

Abstract: A non-transitory computer readable medium, a flash controller and a method for state responsive encoding and programming; the method may include encoding an information entity by applying a state responsive encoding process to provide at least one codeword; wherein the state responsive encoding process is responsive to a state of flash memory cells; and programming the at least one codeword to at least one group of flash memory cells by applying a state responsive programming process that is responsive to the state, the state being either an estimated state or an actual state.

Abstract: A flash memory controller, a non-transitory computer readable medium and a method for reading flash memory cells of a flash memory module. The method may include calculating a group of read thresholds to be applied during a reading operation of a set of flash memory cells that belong to a certain row of the flash memory module based upon a compressed representation of reference read thresholds associated with multiple reference rows of the flash memory module; and reading the set of flash memory cells by applying the group of reference read thresholds to provide read results.

Abstract: A system, computer readable program, and method for programming flash memory, the method includes: providing multiple pairs of most significant bit (MSB) page uncoded bit error rates (UBERs) and least significant bit (LSB) page UBERs; selecting a selected MSB page code rate and a selected LSB page code rate so that a selected MSB page UBER associated with the selected MSB page code rate and a selected LSB page UBER associated with the selected LSB page code rate support a highest average UBER out of the multiple pairs of MSB page UBERs and LSB page UBERs, wherein the selected MSB page code rate and the selected LSB page code rate are obtainable under a desired code rate constraint; and determining an encoding and programming scheme that may be based on the selected MSB page UBER, the selected MSB code rate, the selected LSB page UBER and the selected LSB code rate.