Abstract: According to an embodiment, a device comprises: a scintillator layer configured to convert x-ray or gamma ray photons into photons of visible light; a photodiode layer configured to convert visible light produced by the scintillator layer into an electric current; an integrated circuit, IC, layer situated below the photodiode layer and configured to receive and process the electric current; wherein electrical contacts of the IC layer are connected to electrical contacts of the photodiode layer using wire-bonding; and wherein the wire-bonding is covered with a protective material while bottom part of the IC layer is left at least partly exposed. Other embodiments relate to a detector comprising an array of tiles according to the device; and an imaging system comprising: an x-ray source and the detector.

Abstract: According to an embodiment, a device comprises a direct conversion compound semiconductor layer configured to convert high energy radiation photons into an electric current, the direct conversion compound semiconductor layer comprising: a pixel array positioned in the direct conversion compound semiconductor layer, including pixels located at an outermost circumference, wherein the pixels comprise signal pads; a guard ring encircling the pixel array, wherein the pixels at the outermost circumference are closest to the guard ring; guard ring contact pads, wherein the guard ring contact pads are situated in place of some of the pixel signal pads at the outermost circumference and connected to the guard ring; wherein the guard ring contact pads are further situated asymmetrically with respect to a symmetry x-axis and a symmetry y-axis of the direct conversion compound semiconductor layer.

Abstract: In an embodiment, a method comprises: configuring a direct conversion compound semiconductor sensor over a first surface of a readout integrated circuit, IC, comprising two surfaces, each surface comprising solder material on the surface; illuminating the solder material with an infra-red laser such that the solder material on the readout IC melts and forms solder joints between the readout IC and the direct conversion compound semiconductor sensor; configuring a substrate over a second surface of the readout IC comprising solder material; and illuminating the solder material of the second surface with the infra-red laser such that the solder material on the readout IC melts and electrically connects the readout IC with the substrate. In other embodiments, a high frequency radiation detector and an imaging apparatus are discussed.

Abstract: According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray, radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray, radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current.

Abstract: In an embodiment, a method comprises: configuring a direct conversion compound semiconductor sensor over a first surface of a readout integrated circuit, IC, comprising two surfaces, each surface comprising solder material on the surface; illuminating the solder material with an infra-red laser such that the solder material on the readout IC melts and forms solder joints between the readout IC and the direct conversion compound semiconductor sensor; configuring a substrate over a second surface of the readout IC comprising solder material; and illuminating the solder material of the second surface with the infra-red laser such that the solder material on the readout IC melts and electrically connects the readout IC with the substrate. In other embodiments, a high frequency radiation detector and an imaging apparatus are discussed.

Abstract: According to an embodiment, a method comprises: configuring a panel plate as an entrance window for high energy electromagnetic, for example x-ray or gamma ray, radiation; attaching a bias plate on the panel plate, wherein the bias plate is configured to conduct electricity and pass the radiation through it; and attaching an array of tiles, where in each tiles comprises a direct conversion compound semiconductor sensor and a readout integrated circuit, IC, layer on the bias plate so that the direct conversion compound semiconductor sensor is configured on the bias plate; wherein the direct conversion compound semiconductor sensor is configured to convert photons of the high energy electromagnetic, for example x-ray or gamma ray, radiation into an electric current; and wherein the readout IC layer is situated next to the direct conversion compound semiconductor sensor and configured to receive the electric current and process the electric current.

Abstract: In one example, an image data correction device is configured to an ionizing radiation detection device, wherein the ionizing radiation detection device is configured to detect ionizing radiation in a plurality of energy ranges transmitted through an object to which radiation is irradiated from a radiation source, the radiation detection device comprising: a first detector for detecting ionizing radiation in a first energy range that is transmitted through the object to generate first radiation image data; a second detector configured in parallel to the first detector with a predetermined region sandwiched between the first and the second detectors, for detecting ionizing radiation in a second energy range that is transmitted through the object to generate second radiation image data. The first and the second detectors are configured to receive the ionizing radiation concurrently so that the first and the second image data are generated concurrently.

Abstract: There is disclosed a substrate including at least one photodetector, the photodetector having a first active area on a first surface of the substrate and a second active area on a second surface of the substrate, wherein the photodetector is provided with a conductive via electrically isolated from the substrate, said conductive via extending through the photodetector from the first surface of the substrate to the second surface of the substrate for connecting the first active area to the second surface of the substrate, the second surface providing electrical connections for the first and second active areas of the photodetector.

Abstract: There is disclosed an imaging system comprising: a first integrated circuit including a photodiode array comprising a plurality of integrating photodiode elements formed in an array of rows and columns, the integrated circuit providing a plurality of output signals corresponding to an output of each photodiode; and a second integrated circuit for receiving as inputs the plurality of output signals from the first integrated circuit and including a plurality of multiplexers corresponding to the number of columns in the array, the outputs signals from a respective column forming inputs to a respective multiplexer, each multiplexer for selectively connecting one of the output signals to a multiplexer output, wherein each multiplexer is selectively switched between the plurality of output signals by a plurality of control lines, the number of control lines corresponding to the number of rows in the array.

Abstract: There is disclosed a photo-detector array including a plurality of sub-arrays of photo-detectors, the photo-detectors of each sub-array being formed on a substrate with an active area of each photo-detector being formed on a surface of the substrate, there further being formed for each photo-detector a conductive via through the substrate from an upper surface thereof to a lower surface thereof to connect the active area of each photo-detector to the lower surface of the substrate, wherein a plurality of said sub-arrays of photo-detectors are placed adjacent to each other in a matrix to form the photo-detector array. An imaging system comprising: a radiation detector including such a photo detector array, a radiation source facing the radiation detector, and means for controlling the radiation detector and the radiation source is also disclosed. A method for making such an array is also disclosed.

Abstract: There is disclosed an imaging system comprising: a first integrated circuit including a photodiode array comprising a plurality of integrating photodiode elements formed in an array of rows and columns, the integrated circuit providing a plurality of output signals corresponding to an output of each photodiode; and a second integrated circuit for receiving as inputs the plurality of output signals from the first integrated circuit and including a plurality of multiplexers corresponding to the number of columns in the array, the outputs signals from a respective column forming inputs to a respective multiplexer, each multiplexer for selectively connecting one of the output signals to a multiplexer output, wherein each multiplexer is selectively switched between the plurality of output signals by a plurality of control lines, the number of control lines corresponding to the number of rows in the array.

Abstract: There is disclosed a photo-detector array including a plurality of sub-arrays of photo-detectors, the photo-detectors of each sub-array being formed of: a plurality of anodes formed at a first surface of at least one substrate; a corresponding plurality of cathodes formed at a second surface of at least one substrate; and an electrical interconnection between the plurality of anodes, whereby outputs of the array are provided by the plurality of cathodes, wherein a plurality of said sub-arrays of photo-detectors are placed adjacent to each other in a matrix to form the photo-detector array.