Abstract: A detection mechanism of a detection device includes a pulsed laser oscillator that emits a pulsed laser beam; an f? lens facing a workpiece held by a chuck table; a thermal excitation section that applies the pulsed laser beam emitted from the pulsed laser oscillator to an upper surface of a wafer through the f? lens and generates an ultrasonic wave propagated in a spherical form by thermal excitation; and an image forming section that forms an image by capturing a reflected laser beam influenced by vibration of the ultrasonic wave generated by the thermal excitation section, propagated through the inside of the workpiece, reflected by a lower surface of the workpiece, and returned to the upper surface of the workpiece, by an aperture synthesis method.

Abstract: A control unit of a laser processing apparatus includes: a reference image storage section that images streets before formation of modified layers by an imaging unit and stores the captured image as a reference image; a calculation section that compares the reference image stored in the reference image storage section with an image of a wafer held by a chuck table that is captured by the imaging unit, and calculates the degree of agreement of the two images; and a decision section that decides whether the wafer is an unprocessed wafer not formed with the modified layers in the case where the degree of agreement calculated by the calculation section is more than a first predetermined value, and decides whether the wafer is a processed wafer formed with the modified layers in the case where the degree of agreement is equal to or less than a second predetermined value.

Abstract: A wafer forming method includes a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through an ingot to the ingot with a focal point of the laser beam positioned inside from a side surface at a position corresponding to the thickness of a wafer to be formed, to form a modified layer over the whole circumference of the side surface, a peeling-off layer forming step of exerting an external force from an upper surface of the ingot and concentrating a stress on a crack extending from the modified layer to the inside, to cause the crack to develop from the side surface side toward the inside and form a peeling-off layer, and a wafer forming step of peeling off a wafer to be formed, from the ingot, with the peeling-off layer as a start point, to form the wafer.

Abstract: A method of adjusting a laser processing apparatus includes controlling an X-axis galvanometer scanner and a Y-axis galvanometer scanner on the basis of X coordinates and Y coordinates recorded in a coordinate recording section to apply a pulsed laser beam to a workpiece, thereby processing the workpiece, actuating an X-axis moving mechanism and a Y-axis moving mechanism on the basis of the X coordinates and the Y coordinates recorded in the coordinate recording section and causing an image capturing unit to capture an image of processed marks on the workpiece, and detecting shifts between X coordinates and Y coordinates of the processed marks whose image has been captured in the processed mark image capturing step and the X coordinates and the Y coordinates recorded in the coordinate recording section, and recording corrective values in a corrective value recording section.

Abstract: A grinding apparatus includes a first grinding mechanism, a second grinding mechanism, and a third grinding mechanism for grinding wafers held on respective chuck tables. The first grinding mechanism and the second grinding mechanism are positioned with respect to the chuck tables such that a second ground mark produced on a wafer by second grindstones of the second grinding mechanism as it grinds the wafer extends across a first ground mark produced on the wafer by first grindstones of the first grinding mechanism as it grinds the wafer. The second grinding mechanism and the third grinding mechanism are positioned with respect to the chuck tables such that a third ground mark produced on the wafer by third grindstones of the third grinding mechanism as it grinds the wafer extends across the second ground mark produced on the wafer by the second grindstones.

Abstract: A method of processing a SiC ingot includes a resistance value measuring step of measuring an electric resistance value of an end face of the SiC ingot, a laser beam output adjusting step of adjusting the output of a laser beam according to the electric resistance value measured in the resistance value measuring step, and a peeling belt forming step in which, while a laser beam of such a wavelength as to be transmitted through the SiC ingot is being applied to the SiC ingot with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be formed, the SiC ingot and the focal point are put into relative processing feeding in an X-axis direction to form a belt-shaped peeling belt in the inside of the SiC ingot.

Abstract: An apparatus that utilizes high-pressure air therein includes a main body, an air pipe configured to be supplied with high-pressure air from a high-pressure air supply source and supply the high-pressure air into the main body, a filter configured to remove oil contained in the high-pressure air flowing through the air pipe, a gas detector configured to detect an organic gas derived from oil and contained in the high-pressure air that has passed through the filter, and a reporting unit configured to report, when the gas detector detects the organic gas contained in the high-pressure air, that the high-pressure air is mixed with the oil.

Abstract: A method for manufacturing an SiC wafer from an SiC ingot includes a verifying step of applying a test laser beam to the SiC ingot in a predetermined area with the focal point of the test laser beam set inside the SiC ingot at a predetermined depth from the end surface of the SiC ingot. The test laser beam has a transmission wavelength to SiC, thereby forming a test separation layer inside the SiC ingot at the predetermined depth. The test separation layer has a test modified portion where SiC is decomposed into Si and C and test cracks extend from the test modified portion along a c-plane in the SiC ingot. Whether or not the test cracks have been properly formed is verified. When verifying, the power of the test laser beam is changed to set a proper power at which the test cracks are properly formed.

Abstract: A processing apparatus includes a chuck table for holding a workpiece that has a mark representing a crystal orientation, a processing unit, a cassette stage for placing thereon a cassette for storing a plurality of workpieces therein, a temporary rest table, a spinner table, a robot for delivering a workpiece, a determining section for determining whether a workpiece has been properly processed or has not been properly processed, and a control unit for performing a control process for orienting the mark of the workpiece in a predetermined direction if the determining section determines that the workpiece has been properly processed and storing the workpiece in the cassette, and performing a control process for orienting the mark of the workpiece in a direction different from the predetermined direction if the determining section determines that the workpiece has not been properly processed and storing the workpiece in the cassette.

Abstract: There is provided a cleaning nozzle that cleans a cleaning target face that is one of a holding face that holds a workpiece and/or a surface of the workpiece held on the holding face. The cleaning nozzle includes an air nozzle having an jet port for jetting air toward the cleaning target face and extending in a direction parallel to the cleaning target face, and a suction nozzle having a suction port for sucking air on the cleaning target face and arranged adjacent to and in parallel to the air nozzle.

Abstract: A laser beam applying unit of a laser processing apparatus includes a beam splitter disposed on a first optical path connecting a laser oscillator and a condenser, a wide band light source disposed on a second optical path branched by the beam splitter, a spectroscope that is disposed between the wide band light source and the beam splitter and that branches the laser beam from the second optical path to a third optical path, and a Z position detection unit that is disposed on the third optical path branched by the spectroscope and that detects the position in a Z-axis direction of a workpiece according to an intensity of light corresponding to the wavelength of return light that is generated when the light of the wide band light source is condensed by the condenser and is reflected by the workpiece held by a chuck table.

Abstract: A resin applying machine includes a processing chamber, a temperature measuring unit, and a controller. The processing chamber houses therein a holder for holding the wafer, a table that faces the holder, a resin supply unit for supplying a liquid resin to the table, a moving unit for relatively moving the holder and the table closely to each other, and a hardening unit for hardening the liquid resin that has coated the wafer. The temperature measuring unit measures a temperature in the processing chamber. The controller includes a correlation data storage unit for recording therein correlation data with respect to the temperature in the processing chamber and a moved distance by which the holder and the table are relatively moved by the moving unit at the temperature.

Abstract: A sheet attaching apparatus includes a sheet attaching section that attaches a sheet to a workpiece, and a sheet cutting section that cuts off the sheet from the workpiece along an outer edge. The sheet cutting section includes a chuck table that holds the workpiece, a sheet holding section that detachably holds a peripheral portion of the sheet, a cutting section that cuts the sheet along the outer edge of the workpiece, and a sheet accommodating section that accommodates an unnecessary part of the sheet cut and dropped due to release of holding by the sheet holding section.

Abstract: A notch detecting method for detecting a notch defined in an outer circumferential portion of a wafer includes a placing step of placing the wafer on a rotary table, an image capturing step of acquiring an image of the outer circumferential portion of the wafer, a contour data acquiring step of acquiring contour data including coordinates of a contour of the wafer, a hypothetical circle calculating step of calculating a hypothetical circle that approximates the contour of the wafer, an irregularly shaped area determining step of determining whether an irregularly shaped area exists in the outer circumferential portion of the wafer or not, and a first notch determining step of determining whether the irregularly shaped area is the notch or not.

Abstract: An inspection apparatus for a laser oscillator includes a dimming plate that dims a laser beam immediately after the laser beam is emitted from the laser oscillator; an imaging unit that images, with a plurality of pixels, the laser beam dimmed by the dimming plate; a processing unit that processes an image captured by the imaging unit; and a display unit that displays the image processed by the processing unit. The processing unit has at least two thresholds of an inner ring and an outer ring used for partitioning the intensity of the laser beam.

Abstract: A laser processing apparatus includes a main imaging unit configured to image a region to be laser-processed and an auxiliary imaging unit. The auxiliary imaging unit includes an objective lens, a camera configured to generate an image via the objective lens, a half-silvered mirror disposed between the camera and the objective lens, a light source configured to illuminate a wafer held on a chuck table via the half-silvered mirror and the objective lens, a first polarizing plate disposed between the camera and the half-silvered mirror, and a second polarizing plate disposed between the light source and the half-silvered mirror. The second polarizing plate is disposed such that a polarization plane of light applied from the light source, passed through the second polarizing plate, and reflected by the half-silvered mirror is rotated by a required angle with respect to a polarization axis of the first polarizing plate.

Abstract: To satisfactorily apply a protective tape to a bump wafer, an application apparatus (1) for applying a protective tape (PT) to a wafer (W) includes: an application table (60) configured to support the wafer (W); a tape holding body (30) capable of holding the protective tape (PT) and configured to supply the protective tape (PT) held by the tape holding body (30) onto the wafer (W); and a pressing member (62) configured to press the protective tape (PT) from above. The pressing member (62) includes a protective layer outer periphery retainer (620) configured to press a peripheral portion of a protective layer (PL), which is laminated on the protective tape (PT) and has an outer diameter smaller than an outer diameter of the wafer (W), to apply the protective tape (PT) to the wafer (W).

Abstract: A laser reflow apparatus reflows solder bumps disposed on a side of a semiconductor chip in a workpiece and included in an irradiation range on the workpiece by applying a laser beam to an opposite side of the semiconductor chip. The laser reflow apparatus includes a spatial beam modulation unit including a laser power density setting function to locally set the laser power density in the irradiation range of a laser beam emitted from a laser beam source, and an image focusing unit including an image focusing function to focus the laser beam emitted from the laser beam source and apply the focused laser beam to the irradiation range on the workpiece.

Abstract: A holding mechanism includes a Bernoulli pad that holds a plate-shaped body, a hand on which the Bernoulli pad is disposed, a sensor that is disposed on the hand and detects that the plate-shaped body is held under suction by the Bernoulli pad, a lateral movement restriction section disposed on the hand, a tube that connects an air source supplying air to the Bernoulli pad and the Bernoulli pad, an adjustment valve that is disposed in the tube and adjusts a flow rate of air supplied to the Bernoulli pad, and a control section that controls operation of the adjustment valve. The control section gradually increases the flow rate of the air supplied from the adjustment valve to the Bernoulli pad and, when it is detected by the sensor that the plate-shaped body has been held under suction by the Bernoulli pad, fixes the flow rate of the air.

Abstract: Edge trimming is performed on a wafer while a cleaning liquid is supplied to the center of a face side of the wafer and the wafer is rotated to form a film of the cleaning liquid that covers the face side of the wafer. The film of the cleaning liquid prevents the face side of the wafer from being dried, lowering the probability that swarf will be introduced into devices on the face side of the wafer. In addition, the consumption of the cleaning liquid can be reduced compared with a step of performing edge trimming on the wafer while supplying a curtain of cleaning liquid to the entire face side of the wafer.