Patents Assigned to DNF CO., LTD.
  • GERMANIUM COMPOUND, SEMICONDUCTOR DEVICE FABRICATED USING THE SAME, AND METHODS OF FORMING THE SAME
    Publication number: 20080035906
    Abstract: A germanium (Ge) compound is provided. The Ge compound has a chemical formula GeR1xR2y. “R1” is an alkyl group, and “R2” is one of hydrogen, amino group, allyl group and vinyl group. “x” is greater than zero and less than 4, and the sum of “x” and “y” is equal to 4. Methods of forming the Ge compound, methods of fabricating a phase change memory device using the Ge compound, and phase change memory devices fabricated using the Ge compound are also provided.
    Type: Application
    Filed: July 13, 2007
    Publication date: February 14, 2008
    Applicants: SAMSUNG ELECTRONICS CO., LTD., DNF CO., LTD.
    Inventors: Hye-Young PARK, Myong-Woon KIM, Jin-Dong KIM, Choong-Man LEE, Jin-Il LEE