Abstract: A touch screen, a touch panel, and a driving method thereof are provided. The touch panel recognizes a user's touch, and includes a plurality of driving lines arranged in a first direction. A plurality of sensing lines are arranged in a direction crossing the first direction. Pixels are at locations where the driving lines and the sensing lines cross each other. Some of the pixels include mutual capacitance type pixels that recognize the user's touch by mutual capacitance, and at least part of the remainder of the pixels include self-capacitance type pixels that recognize the user's touch by self-capacitance.

Abstract: A data driver is disclosed. The data driver includes a first latch unit including a plurality of first latches configured to store data, a selector configured to select and/or output data in two or more first latches, a level shifter unit configured to convert a voltage level of the data in the two or more selected first latches and output the voltage level-converted data, and a second latch unit including a plurality of second latches configured to store the voltage level-converted data.

Abstract: A semiconductor device and method of manufacturing the same are provided. A device can include an LDMOS region and a high side region on a semiconductor substrate. The device can further include an insulating region separating the LDMOS region from the high side region and the insulating region can include a plurality of second conductive type wells, a plurality of second conductive type buried layer patterns, or both.

Abstract: An image sensor and a row averaging method for an image sensor capable of simultaneously selecting the pixels of the same color in the same column of different rows in a pixel array and performing a signal process, thereby preventing an increase in an area and a decrease in the sensing speed of the pixels in the sub-sampling mode and the binning mode of the image sensor.

Abstract: A passive type image sensor and a method for operating the same. The passive type image sensor includes a photoelectric conversion section configured to receive light and integrate electric charges; a transfer section configured to transmit the integrated electric charges; an output section configured to received integrated electric charges from the transfer section and amplify and output the amplified electric charges; and an electric charge discharging section configured to discharge the electric charges flowing from the photoelectric conversion section to a common node through the transfer section while integrating the electric charge integration in the photoelectric conversion section.

Abstract: Disclosed herein is a method of driving a touch panel having driving lines, sensing lines, and node capacitors between neighboring driving lines and sensing lines. The method includes pairing two neighboring driving lines, setting the pairs such that each of the pairs is driven using driving signals having an opposite phase, shuffling positions of the pairs so that at least one set of neighboring pairs includes different driving lines, classifying or combining at least two shuffled pairs into one group, generating Hadamard codes based on the pairs in each group, and simultaneously driving the driving lines in each of the generated Hadamard codes.

Abstract: A method of manufacturing a backside illumination image sensor includes forming an epitaxial layer on a silicon (Si) substrate, and forming an inter-metal dielectric (IMD) on the epitaxial layer. The method includes forming a trench in one side region of the epitaxial layer, forming an insulating layer at a side wall and bottom of the trench, forming a color filter and microlens on the IMD, bonding a support wafer onto the IMD with the color filter and microlens formed therein, and/or removing the Si substrate.

Abstract: A laterally-diffused metal oxide semiconductor (LDMOS) device and method of manufacturing the same are provided. The LDMOS device can include a drift region, a source region and a drain region spaced a predetermined interval apart from each other in the drift region, a field insulating layer formed in the drift region between the source region and the drain region, and a first P-TOP region formed under the field insulating layer. The LDMOS device can further include a gate polysilicon covering a portion of the field insulating layer, a gate electrode formed on the gate polysilicon, and a contact line penetrating the gate electrode, the gate polysilicon, and the field insulating layer.

Abstract: A programmable memory is provided. The programmable memory has a select transistor that includes a gate, a source, and a drain. An anti-fuse device is connected to a drain region of the select transistor. The anti-fuse device includes a dielectric layer on an upper substrate of the drain region, a polysilicon layer on the dielectric layer, and an anti-fuse electrode line in contact with the drain region. The dielectric layer breaks down and the anti-fuse device is programmed when the select transistor is turned on and a high voltage is applied through the anti-fuse line.

Abstract: A method of manufacturing an image sensor is provided. The method includes forming a photodiode in a pixel area in a first substrate and forming an insulating layer and a metal wire; forming a color filter layer and a microlens on the insulating layer; attaching a cover glass for the microlens to the insulating layer; back-grinding the first substrate to decrease its thickness; forming a via in the first substrate electrically coupled to the metal wire; forming a first microbump on the via; and forming a second microbump on a logic area of a second substrate; and coupling the first and the second microbumps to electrically couple the pixel area to the logic area.

Abstract: Disclosed herein is a method of driving a touch panel having driving lines, sensing lines, and node capacitors between neighboring driving lines and sensing lines. The method includes pairing two neighboring driving lines, setting the pairs such that each of the pairs is driven using driving signals having an opposite phase, shuffling positions of the pairs so that at least one set of neighboring pairs includes different driving lines, classifying or combining at least two shuffled pairs into one group, generating Hadamard codes based on the pairs in each group, and simultaneously driving the driving lines in each of the generated Hadamard codes.

Abstract: An image sensor includes a plurality of pixels, wherein each of the pixels includes a storage unit configured to electrically connect with a floating diffusion region and store photocharges therein, and a selector configured to selectively connect and disconnect the storage unit to and from the floating diffusion region in accordance with selection signals. The storage unit includes a capacitive element electrically connected to the floating diffusion region. The selector includes a switching element for selecting the pixel for connection to the floating diffusion region. The switching element is operated by the selection signals to selectively drive the capacitive element.

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) device, and a method of manufacturing the same are provided. The LDMOS device can include a drain region of a bootstrap field effect transistor (FET), a source region of the bootstrap FET, a drift region formed between the drain region and the source region, and a gate formed at one side of the source region and on the drift region.

Abstract: An image sensor may include at least one device isolation layer that passes through an epitaxial layer in a semiconductor substrate to isolate pixel regions, a light-receiving element in each pixel region, and a transistor in the active region of the semiconductor substrate partitioned by the device isolation layer.

Abstract: Embodiments relate to a method for manufacturing a semiconductor device including at least one of: (1) Forming a lower electrode pattern on a substrate. (2) Forming an etch stop film on/over the lower electrode pattern. (3) Forming a first interlayer insulating layer on/over the etch stop film. (4) Forming an upper electrode pattern on/over the first interlayer insulating layer. (5) Forming a second interlayer insulating layer on/over the upper electrode pattern. (6) Forming an etch blocking layer positioned between the lower electrode pattern and the upper electrode pattern which passes through the second interlayer insulating layer and the first interlayer insulating layer. (7) Forming a cavity which exposes a side of the etch blocking layer by etching the second interlayer insulating layer and the first interlayer insulating layer. (8) Forming a contact ball in the cavity.

Abstract: A sense amplifier circuit for a nonvolatile memory that includes a first amplifier to perform a switching operation to output a first signal on a sense amplifier based logic (SABL) node depending on the state of a sensing enable signal, a second amplifier to perform a switching operation to output a second signal on the SABL node depending on the state of the sensing enable signal, a current mirror that sinks current on the SABL node depending on the sensing enable signal and a bit line signal, and an inverter arranged to output the signal on the SABL node as a data signal.

Abstract: A pixel array and an image sensor including the pixel array having improved sensitivity and can drive pixels with high resolution, according to embodiments. In embodiments, a pixel array may include a plurality of pixels having a pixel area and a logic area. The pixel array may include at least one of: (1) A photoelectric conversion unit in the pixel area of each of the pixels. (2) A pixel-area transistor disposed at a side of the photoelectric conversion unit in the pixel area. (3) A metal-0 layer on the pixel-area transistor. (4) A metal-1 layer on and/or over the metal-0 layer. (5) A light reception unit on and/or over the metal-1 layer, with the metal-1 layer being the top metal layer in the pixel area.

Abstract: An image sensor may include a semiconductor substrate, a plurality of light receiving devices formed within the semiconductor substrate, and a plurality of device isolation films for isolating the light receiving devices from each other. When an arrangement direction of a pixel array may be formed by arranging the light receiving devices is a horizontal direction, the pixel array may be formed by alternately arranging a first type light receiving device and a second type light receiving device having different horizontal lengths.

Abstract: Semiconductor devices and methods of fabricating the same are provided. An insulating film can be disposed on a semiconductor substrate, and insulating film patterns can be formed opening a plurality of areas with predetermined widths by patterning the insulating film. A plurality of ion implantation areas having a first conductivity type can be formed by implanting impurities into the plurality of open areas, and an oxide film pattern can be formed on each of the ion implantation areas. The insulating film patterns can be removed, and ion implantation areas having a second conductivity type can be formed by implanting impurities using the oxide film pattern as a mask. The semiconductor substrate can be annealed at a high temperature to form deep wells.

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) device, and a method of manufacturing the same are provided. The LDMOS device can include a drain region of a bootstrap field effect transistor (FET), a source region of the bootstrap FET, a drift region formed between the drain region and the source region, and a gate formed at one side of the source region and on the drift region.