Patents Assigned to DRS FPA, L.P.
  • Intrinsic p-type HgCdTe using CdTe capping layer
    Patent number: 6114738
    Abstract: A hybrid focal plane array has Hg.sub.1-x Cd.sub.x Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to support interdiffusion between the Te-rich CdTe capping layer and the HgCdTe substrate. Use of the CdTe capping layer with a slight excess Te maintains the surface of the HgCdTe substrate in a Te-rich phase condition.
    Type: Grant
    Filed: September 28, 1999
    Date of Patent: September 5, 2000
    Assignee: DRS FPA, L.P.
    Inventors: John Harold Tregilgas, Arthur Monroe Turner
  • Method of producing intrinsic p-type HgCdTe using CdTe capping layer
    Patent number: 6030853
    Abstract: A hybrid focal plane array has Hg.sub.1-x Cd.sub.x Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to support interdiffusion between the Te-rich CdTe capping layer and the HgCdTe substrate. Use of the CdTe capping layer with a slight excess Te maintains the surface of the HgCdTe substrate in a Te-rich phase condition.
    Type: Grant
    Filed: August 13, 1993
    Date of Patent: February 29, 2000
    Assignee: DRS FPA, L.P.
    Inventors: John Harold Tregilgas, Arthur Monroe Turner