Abstract: An aspect of the present invention provides a metal pillar in a columnar shape formed by cutting a metal wire to a predetermined length. The metal pillar has a burr length of 0.1 to 0.5 ?m on the cutting surface and provide a connecting pillar that has a solder layer on at least one area of the outer surface of the metal pillar, which comprises Sn, Cu, and Ag.

Abstract: An aspect of the present invention provides a metal pillar in a columnar shape formed by cutting a metal wire to a predetermined length. The metal pillar has a burr length of 0.1 to 0.5 ?m on the cutting surface, an electrical conductivity of 11 to 101% IACS, and a Vickers hardness of 150 to 300 HV.

Abstract: Disclosed is a metal core solder ball having improved heat conductivity, including a metal core having a diameter of 40˜600 ?m, a first plating layer formed on the outer surface of the metal core, and a second plating layer formed on the outer surface of the first plating layer.

Abstract: A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle (?) between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0°<?<180°.

Abstract: A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle (?) between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0°<?<180°.

Abstract: A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle (?) between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0°<?<180°. Also, a metal nanowire according to another embodiment of the invention includes at least two wire portions. The metal nanowire includes an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion. A diameter of the n-th wire portion is different from a diameter of the (n+1)-th wire portion. In addition, a core-shell nanowire according to yet another embodiment includes a nanowire core; and a metal-compound shell formed on the nanowire core. A method of manufacturing a metal nanowire according to an embodiment includes preparing a reaction mixture and synthesizing a nanowire.

Abstract: A nanowire according to an embodiment of the invention comprises a nanowire core and a metal-compound coated on the nanowire core, wherein the nanowire core comprises at least two bent portions, and wherein an angle (?) between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0<?<180°.

Abstract: Disclosed is a metal core solder ball having improved heat conductivity, including a metal core having a diameter of 40˜600 ?m, a first plating layer formed on the outer surface of the metal core, and a second plating layer formed on the outer surface of the first plating layer.

Abstract: Disclosed herein are a lead-free solder alloy and a manufacturing method thereof. More specifically, disclosed are: a lead-free solder alloy, which comprises 0.8-1.2 wt % silver (Ag), 0.8-1.2 wt % copper (Cu), 0.01-1.0 wt % palladium (Pd), 0.001-0.1 wt % tellurium (Te), and a balance of tin (Sn), and thus has a melting point similar to those of prior lead-free solder alloys, excellent wettability, very low segregation ratio, and excellent weldability with a welding base metal, such that it improves temperature cycle performance and drop impact resistance simultaneously, when it is applied to electronic devices and printed circuit boards; a manufacturing method of the above alloy; and electronic devices and printed circuit boards which include the same.

Abstract: The present invention relates to a solder adhesive and a production method for the same, and to an electronic device comprising the same, and more specifically it relates to a solder adhesive comprising an alloy including tin and having a melting point of from 130 to 300° C., a first binder including a rosin compound, and a second binder having a thermosetting resin, as well as to a production method for the same and an electronic device comprising the same.

Abstract: Disclosed herein are a lead-free solder alloy and a manufacturing method thereof. More specifically, disclosed are: a lead-free solder alloy, which comprises 0.8-1.2 wt % silver (Ag), 0.8-1.2 wt % copper (Cu), 0.01-1.0 wt % palladium (Pd), 0.001-0.1 wt % tellurium (Te), and a balance of tin (Sn), and thus has a melting point similar to those of prior lead-free solder alloys, excellent wettability, very low segregation ratio, and excellent weldability with a welding base metal, such that it improves temperature cycle performance and drop impact resistance simultaneously, when it is applied to electronic devices and printed circuit boards; a manufacturing method of the above alloy; and electronic devices and printed circuit boards which include the same.