Abstract: A power amplifier includes larger size transistors to provide higher power gain at lower frequencies. Transistors of transistor unit cells include a horseshoe-shaped emitter and a strip-shaped base to increase gain. Transistors are combined at a first level to form transistor arrays, which are combined with bonding wires at a second level to an output micro strip transmission line. A Vbe referenced bias circuit may include a smart function to lower quiescent current.
Type:
Grant
Filed:
November 28, 2005
Date of Patent:
May 1, 2007
Assignee:
Dynalinear Technologies, Inc.
Inventors:
Reza Esfandiari, Nam-Min Cho, Alzon B. Canilao, Ron Green, Hyungmo Yoo
Abstract: A power amplifier comprises first and second power transistor stages that receive first and second supply voltages, respectively. First and second bias circuits provide the biasing for the first and second power transistor stages, respectively, in response to a reference voltage and a bias voltage.
Type:
Grant
Filed:
March 18, 2004
Date of Patent:
June 6, 2006
Assignee:
Dynalinear Technologies, Inc.
Inventors:
Alzon B. Canilao, Ronald P. Green, Gi Young Lee
Abstract: A power amplifier includes larger size transistors to provide higher power gain at lower frequencies. Transistors of transistor unit cells include a horseshoe-shaped emitter and a strip-shaped base to increase gain. Transistors are combined at a first level to form transistor arrays, which are combined with bonding wires at a second level to an output micro strip transmission line. A Vbe referenced bias circuit may include a smart function to lower quiescent current.
Type:
Grant
Filed:
February 18, 2004
Date of Patent:
April 11, 2006
Assignee:
Dynalinear Technologies, Inc.
Inventors:
Reza Esfandiari, Nam-Min Cho, Alzon B. Canilao, Ron Green, Hyungmo Yoo
Abstract: An RF amplifier comprises a power amplifier and a dual bias circuit. A dual bias circuit comprises a constant current source and a constant voltage source for biasing the power amplifier. The power may include a heterojunction bipolar transistor (HBT) or a bipolar junction transistor (BJT).