Abstract: A clustered Insulated Gate Bipolar Transistor (CIGBT) comprising a drift region (24), a P region (20) formed within the n-type drift region, an N well region (22) formed within the P well region (20), a P base region (32) formed within the N well region (22) and a cathode region (36). One or more trenches (40) are formed in the device and configured to longitudinally intersect the drift region (24) and, optionally, the P well region (20) as well as laterally intersecting the base region (32), the N well region (22) and the P well region (20). An insulating film is formed on the inner surface of the trenches (40) and gate oxide is formed on the insulating film so as to substantially fill the trenches and form a gate.

Abstract: According to the invention there is provided a semiconductor device including: at least one cell including a base region of a first conductivity type having disposed therein at least one emitter region of a second conductivity type; a first well region of a second conductivity type; a second well region of a first conductivity type; a drift region of a second conductivity type; a collector region of a first conductivity type; a collector contact; in which each cell is disposed within the first well region and the first well region is disposed within the second well region; the device further including: a first gate in communication with a base region so that a MOSFET channel can be formed between an emitter region and the first well region; and at least one embedded region embedded in the first well region; in which the device is configured such that during operation of the device a depletion region at a junction between the base region and the first well region can extend to a junction between the first well