Abstract: A method of producing an epitaxial layer on a substrate of silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a thickness uniformity that is better than 5% at a growth rate which is at least 100 ?m/hour. The method comprises providing a cavity with a source material and a substrate of monolithic silicon carbide, evacuating the cavity and raising the temperature to 1400° C. Then the temperature is increased at a rate of about 20° C./min until a predetermined growth temperature is reached. Thereafter, the temperature is kept such that a predetermined growth rate between 10 ?m/min and 300 ?m/min is obtained.