Patents Assigned to Electron R+D International, Inc.
  • Method for fabricating electron multipliers
    Patent number: 6015588
    Abstract: A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.
    Type: Grant
    Filed: September 13, 1996
    Date of Patent: January 18, 2000
    Assignee: Electron R+D International, Inc.
    Inventor: Samuel Goukassian
  • Method for fabricating electron multipliers
    Patent number: 5624706
    Abstract: A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.
    Type: Grant
    Filed: May 15, 1995
    Date of Patent: April 29, 1997
    Assignee: Electron R+D International, Inc.
    Inventor: Samuel Goukassian