Abstract: A wavelength division multiplexing module adapted to combine a plurality of light beams to a mixed light beam is provided. The wavelength division multiplexing module includes a housing, a plurality of light emitting elements, an optical division element, and a plurality of reflectors. The light emitting elements are adapted to provide light beams. The optical division element is disposed on a transmission path of the light beams. The reflectors are disposed on the transmission path of the light beams. The optical division element has a reflection region and a light transmission region on one side opposite to the light emitting elements. The reflection region is adapted to reflect a portion of the light beams, and the light transmission region is adapted to allow the mixed light beam to pass through. At least two of the light emitting elements are arranged in an extending direction of the housing.

Abstract: A wavelength division multiplexing module adapted to combine a plurality of light beams to a mixed light beam is provided. The wavelength division multiplexing module includes a housing, a plurality of light emitting elements, an optical division element, and a plurality of reflectors. The light emitting elements are adapted to provide light beams. The optical division element is disposed on a transmission path of the light beams. The reflectors are disposed on the transmission path of the light beams. The optical division element has a reflection region and a light transmission region on one side opposite to the light emitting elements. The reflection region is adapted to reflect a portion of the light beams, and the light transmission region is adapted to allow the mixed light beam to pass through. At least two of the light emitting elements are arranged in an extending direction of the housing.

Abstract: A nitride semiconductor structure includes a substrate, a nitride semiconductor layer, and a buffer stack layer between the substrate and the nitride semiconductor layer. The buffer stack layer includes a plurality of metal nitride multilayers repeatedly stacked, wherein each of the metal nitride multilayers consists of a first, a second, and a third metal nitride thin films in sequence, or consists of the first, the third, the second, and the third metal nitride thin films in sequence. The aluminum concentration of the first metal nitride thin film is higher than that of the third metal nitride thin film, and the aluminum concentration of the third metal nitride thin film is higher than that of the second metal nitride thin film.

Abstract: A nitride semiconductor structure includes a substrate, a nitride semiconductor layer, and a buffer stack layer between the substrate and the nitride semiconductor layer. The buffer stack layer includes a plurality of metal nitride multilayers repeatedly stacked, wherein each of the metal nitride multilayers consists of a first, a second, and a third metal nitride thin films in sequence, or consists of the first, the third, the second, and the third metal nitride thin films in sequence. The aluminum concentration of the first metal nitride thin film is higher than that of the third metal nitride thin film, and the aluminum concentration of the third metal nitride thin film is higher than that of the second metal nitride thin film.

Abstract: A bonding system and a bonding method for alignment are provided. An optical semiconductor includes a light source and a plurality of protruded elements on a surface thereof. A semiconductor bench includes a light receiving element and a plurality of recess elements on a surface thereof. A sidewall of the protruded elements or a sidewall of the recess elements is slanted. A first metallized layer is disposed on a bonding surface of each protruded element and a second metallized layer is disposed on a bottom surface of each recess element, wherein the first metallized layer is used for bonding with the second metallized layer.

Abstract: A package carrier suitable for carrying at least one light emitting device and at least one light receiving device includes a carrier substrate and a metal sheet. The carrier substrate includes a first carrying area and a second carrying area. The light emitting device is disposed in the first carrying area and the light receiving device is disposed in the second carrying area. The metal sheet is disposed in the carrier substrate and located between the first carrying area and the second carrier area, for blocking optical signal transmission between the light emitting device and the light receiving device.

Abstract: A bonding system and a bonding method for alignment are provided. An optical semiconductor includes a light source and a plurality of protruded elements on a surface thereof. A semiconductor bench includes a light receiving element and a plurality of recess elements on a surface thereof. A sidewall of the protruded elements or a sidewall of the recess elements is slanted. A first metallized layer is disposed on a bonding surface of each protruded element and a second metallized layer is disposed on a bottom surface of each recess element, wherein the first metallized layer is used for bonding with the second metallized layer.

Abstract: A package carrier suitable for carrying at least one light emitting device and at least one light receiving device includes a carrier substrate and a metal sheet. The carrier substrate includes a first carrying area and a second carrying area. The light emitting device is disposed in the first carrying area and the light receiving device is disposed in the second carrying area. The metal sheet is disposed in the carrier substrate and located between the first carrying area and the second carrier area, for blocking optical signal transmission between the light emitting device and the light receiving device.