Patents Assigned to Elite Semiconductor & Sytems International, Inc.
  • Gate controllable lightly doped drain mosfet devices
    Patent number: 4868617
    Abstract: An LDD MOSFET structure in which gate sidewall spacers are formed of polycrystalline silicon and electrically shorted to the gate to extend gate control over the LDD region surface oxide and thereby reduce and control interface charge trapping without increasing substrate currents.
    Type: Grant
    Filed: April 25, 1988
    Date of Patent: September 19, 1989
    Assignee: Elite Semiconductor & Sytems International, Inc.
    Inventors: Stephen S. Chiao, Wung K. Lee