Abstract: An embodiment of the present disclosure provides a MIM capacitor by High-k dielectric and method for fabricating the same to prevent formation of oxygen-based interface films between a lower electrode and a dielectric layer, and between an upper electrode and a dielectric layer by stacking a first film formed of metal between the dielectric layer formed of a High-k material having a high dielectric constant and the lower electrode formed of metal, and a second film formed of metal between the dielectric layer and the upper electrode.
Type:
Grant
Filed:
January 25, 2022
Date of Patent:
April 16, 2024
Assignee:
Elohim Incorporation
Inventors:
Seunggu Lim, Jihoon Cha, Dong-Ki Lee, Taedong Kim, Yeonglyeol Park