Abstract: A pivoted acceleration sensor has a substrate that is substantially parallel to first and second surfaces. A reference frame is provided. A first unbalanced seismic mass is suspended within the reference frame and is coupled with the reference frame through first and second strain gauges. The first and second strain gauges are located along a pivot axis of the first unbalanced seismic mass. The first and second strain gauges are first and second piezoresistors on the first surface of the substrate, A second unbalanced seismic mass is flexibly coupled with the first unbalanced seismic mass. The second unbalanced seismic mass is suspended within the reference frame and is coupled with the reference frame through third and fourth strain gauges. The third and fourth strain gauges are located along a pivot axis of the second unbalanced seismic mass. The third and fourth strain gauges are third and fourth piezoresistors on the first surface of the substrate.

Abstract: A micro-sensor is provided with a fixed reference frame and an elastic pivot. The elastic pivot has at least two co-axial segments of pivot and is coupled to the fixed reference frame. The elastic pivot has a neutral axis that is a central line of the pivot. A moveable body is coupled to the elastic pivot and the reference frame. The moveable body and the reference frame share a reference surface. The moveable body extends between the two co-axial segments to provide that for a rotation of the moveable body about the pivot the moveable body approaches the reference surface at a first side, and recedes from the reference surface from an opposite side to provide an opening gap and a closing gap. The neutral axis is below the reference surface. At least a first gauge is configured to detect tilt about the elastic pivot and measure separation of the moveable body and the reference frame at the reference surface. The gauge provides a measurement of the opening and closing of the opening and closing gaps.

Abstract: A piezoelectric sensor includes a ceramic material that has the formula of [Bi2O2][Am?1BmO3m+1], where m=2, A is mono-, di-, or tri-valent ions or a combination of them, B is transition element such as Fe3+, Ti4+, Nb5+, Ta5+, W6+, Mo6+ or a combination of them. The ceramics have high Curie temperature of 900˜940° C. The sensors claimed in the present invention utilize [Bi2O2][Am?1BmO3m+1] ceramics parts as sensing elements in various shapes and dimensions and can be used to sense force, acceleration, and pressure at very high temperatures of 600˜800° C.

Abstract: A mechanical-to-electrical sensing structure has first and second movable blocks formed in a handle layer. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. The first hinge is formed in the handle layer. A first gauge is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gauge. The first gauge is formed from a device layer with an oxide between the device and handle layers. The sensing structure is made from an SOI wafer, and the first gauge is protected during an etching away of handle material beneath the first gauge by an oxide between the device and handle layers and an etch-resistant oxide or nitride on exterior surfaces of the first gauge.

Abstract: A piezoresistive device is provided for sensing mechanical input and converts mechanical movement of at least two relatively movable parts into an electrical output. A silicon substrate is provided that is oriented in the (100) plane and has an n-type impurity. A gap extends across a portion of the substrate. The gap defines the at least two relatively moveable parts. A flexible cross-section connects the at least two relatively moveable parts. The cross-section is made of the same material as the substrate. At least one strain sensitive element is provided on a surface of the silicon substrate, is aligned in a [110] direction and includes a p-type impurity. The strain sensitive element has two end portions interconnected by an intermediate neck portion. The neck portion is supported on a structure that concentrates strain. The structure extends across the gap and has vertical walls that extend to the cross-section in the gap. The structure is made of the same material as the substrate.

Abstract: A process for forming a junction-isolated, electrically conductive via in a silicon substrate and a conductive apparatus to carry electrical signal from one side of a silicon wafer to the other side are provided. The conductive via is junction-isolated from the bulk of the silicon substrate by diffusing the via with a dopant that is different than the material of the silicon substrate. Several of the junction-isolated vias can be formed in a silicon substrate and the silicon wafer coupled to a second silicon substrate of a device that requires electrical connection. This process for forming junction-isolated, conductive vias is simpler than methods of forming metallized vias, especially for electrical devices more tolerant of both resistance and capacitance.

Abstract: A piezoresistive device senses mechanical input and converts mechanical movement of at least two relatively movable parts into an electrical output. An SOI substrate is provided. A gap extends across a portion of the substrate. The gap defines the at least two relatively moveable parts and a flexible cross-section that connects the at least two relatively moveable parts. The cross-section is made of a same material as the substrate. At least one strain sensitive element is at a surface of the substrate. The at least one strain sensitive element has two end portions interconnected by an intermediate neck portion. The neck portion is supported on a structure that concentrates strain. The structure extends across the gap and has vertical walls extending to the cross-section in the gap. The structure is made of the same material as the substrate.

Abstract: A process for forming a junction-isolated, electrically conductive via in a silicon substrate and a conductive apparatus to carry electrical signal from one side of a silicon wafer to the other side are provided. The conductive via is junction-isolated from the bulk of the silicon substrate by diffusing the via with a dopant that is different than the material of the silicon substrate. Several of the junction-isolated vias can be formed in a silicon substrate and the silicon wafer coupled to a second silicon substrate comprised of a device that requires electrical connection. This process for forming junction-isolated, conductive vias is simpler than methods of forming metallized vias, especially for electrical devices more tolerant of both resistance and capacitance.

Abstract: A sensor circuit, method, and system for conversion of a high-impedance, broad frequency range signal from a transducer into two low-impedance signals, one containing high-frequency components and another containing low-frequency components of the input signal. The transducer can be a piezoelectric (PE) transducer transforming motion or vibration into a high-impedance electrical signal with a broad frequency range. A low-frequency circuit output can contain the frequencies in the linear region of the transducer's frequency band. The high-frequency output can contain the natural resonance frequency of the transducer. The circuit includes a low-frequency filter amplifier module and a high-frequency filter amplifier module, both amplifier modules having negative feedback, high input impedance, and low output impedance; the outputs may include a DC bias. The circuit may also include a source follower isolating the filter amplifier modules from each other.

Abstract: A piezoresistive strain concentrator that converts mechanical movement into electrical output and a process for fabricating the concentrator are provided. The device includes a strain sensing structure composed of a piezoresistive strain sensitive element that spans a gap in a substrate. The strain sensing structure is supported on a strain concentrating structure also spanning the gap that has vertical walls extending to a cross-section at the base of the gap, both structures being etched from the substrate. The structure of the strain-concentrating support for the strain sensitive element is fabricated by deep reactive ion etch (DRIE). The strain sensing structure has an increased sensitivity, a low gage factor and an increased resistance to buckling and fracture compared to previous strain gage structures. Several of the strain sensing structures can be connected in a sequence in a bridge circuit.

Abstract: A circuit includes at least one input node, at least one output node, a signal conditioning circuit, and an electrostatic discharge (ESD) circuit. The signal conditioning circuit is characterized by a transfer function and adapted to receive input signals from and provide conditioned output signals to the input and output node(s), respectively. The signal conditioning circuit processes the input signal and outputs the conditioned output signal as a function of the transfer function. The ESD protection circuit is adapted to the signal conditioning circuit (i) to suppress electrostatic discharge signals applied to at least one of the input or output node(s) to levels electrically non-destructive to the signal conditioning circuit and (ii) to interact with the signal conditioning circuit in a manner substantially maintaining the transfer function.

Abstract: A circuit includes at least one input node, at least one output node, a signal conditioning circuit, and an electrostatic discharge (ESD) circuit. The signal conditioning circuit is characterized by a transfer function and adapted to receive input signals from and provide conditioned output signals to the input and output node(s), respectively. The signal conditioning circuit processes the input signal and outputs the conditioned output signal as a function of the transfer function. The ESD protection circuit is adapted to the signal conditioning circuit (i) to suppress electrostatic discharge signals applied to at least one of the input or output node(s) to levels electrically non-destructive to the signal conditioning circuit and (ii) to interact with the signal conditioning circuit in a manner substantially maintaining the transfer function.

Abstract: A radiation sensor which includes a thermopile for detecting radiant energy. The thermopile and a support rim for the thermopile are fabricated as an integrated unit to form a support chip. The support chip is mated to a mating chip so that the thermopile is positioned in an inner cavity region of the radiation sensor. The sensor has a window which permits the transmission of radiant energy into the enclosure such that the radiant energy impinges upon a central absorber region of the thermopile.

Abstract: A transducer circuit, method, and system for conversion of a high-impedance, broad frequency range signal from a sensor into two low-impedance signals, one containing high-frequency components and another containing low-frequency components of the input signal. The sensor can be a piezoelectric (PE) sensor transforming motion or vibration into a high-impedance electrical signal with a broad frequency range. A low-frequency circuit output can contain the frequencies in the linear region of the sensor's frequency band. The high-frequency output can contain the natural resonance frequency of the sensor. The circuit includes a low-frequency filter amplifier module and a high-frequency filter amplifier module, both amplifier modules having negative feedback, high input impedance, and low output impedance; the outputs may include a DC bias. The circuit may also include a source follower isolating the filter amplifier modules from each other.

Abstract: A multi-layer device with a lid, a core, and a base. The lid has a first terminal and a second terminal, and an inner surface with a first insulator. The core has a first surface bonded to the first insulator and a second surface bonded to a second insulator, and includes a pillar electrically connected to the second terminal. The base has an inner surface bonded to the second insulator and a portion being electrically connected to the pillar. The first terminal of the lid and the base are adapted for electrically connecting to an interior electrical unit positioned within the core so that there are conductive paths from the electrical unit to the first and second terminals. The lid can include a third terminal in electrical contact with a portion of the core, and the portion of the core can be adapted for electrically connecting to the electrical unit.

Abstract: A radiation sensor which includes a thermopile for detecting radiant energy. The thermopile and a support rim for the thermopile are fabricated as an integrated unit to form a support chip. The support chip is mated to a mating chip so that the thermopile is positioned in an inner cavity region of the radiation sensor. The sensor has a window which permits the transmission of radiant energy into the enclosure such that the radiant energy impinges upon a central absorber region of the thermopile.

Abstract: A silicon pressure sensor includes a bossed diaphragm provided with a planar surface. The bossed diaphragm converts a pressure applied to the planar surface to a force, and transmits the force through a central boss to a sensing diaphragm positioned next to the bossed diaphragm. The sensing diagram converts the force to an electrical signal. To fabricate the sensor, both diaphragms are formed in large numbers on silicon wafers and then bonded together before being separated as individual, complete sensors.

Abstract: A sensor communications system includes different sensor modules which are connected to a master module on a two-wire multidrop transducer bus to provide multiple communication channels. The sensor modules transmit signals to and receive signals from the master module.

Abstract: Apparatus for detecting presence of a sensor includes a signal source for providing an excitation signal for the sensor. A detector circuit detects a response signal from the sensor in response to the excitation signal for presence detection. A switch is responsive to a control signal for switching between a first switch state for coupling the signal source to the sensor and a second switch state for coupling the detector circuit to the sensor. A controller provides the control signal and analyzes the detected response signal. The excitation signal can be a chirp signal that spans a range of frequencies. First and second tests of the sensor are conducted with the presence of the sensor determined from the first and second tests. Parameters of the detection including gain can be changed for the first and second tests to provide a more accurate test result.

Abstract: An informational/positional guide, which is disposable in an aircraft instrumentation interface, used with at least one mechanical guide key configured to guide interface engagement, and the guide key having an orientation specific to a particular type of aircraft equipment configuration, the guide is provided with a key engagement member. The key engagement member is formed to engage the guide key and is disposable in a variety of angular orientations to facilitate engagement with the guide key. The key engagement member is further provided with an aircraft equipment configuration sensor for identifying the aircraft equipment configuration type in response to sensed orientation of the key engagement member and for generating an electronic signal in response to the identification of the orientation of the key engagement member.