Abstract: An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.

Abstract: A high quality, narrow band gap, hydrogenated amorphous germanium or amorphous silicon alloy material characterized by a host matrix in which all hydrogen is incorporated therein in germanium monohydride or silicon monohydride form, respectively; their mobility-lifetime product for non-equilibrium charge carriers is about 10.sup.-8 and about 10.sup.-7, respectively; their density of defect states in the band gap thereof is less than about 1.times.10.sup.17 and about 2.times.10.sup.16 /cm.sup.3, respectively; and their band gap is about 1.5 and about 0.9 eV, respectively. There is also disclosed a structure formed from a plurality of very thin layer pairs of hydrogenated amorphous germanium and amorphous silicon alloy material, each layer pair of which cooperates to provide narrow band gap material.

Abstract: A method for the low temperature, microwave enhanced, chemical vacuum deposition of thin film material onto a surface of a hollow member by creating a sub-atmospheric pressure condition adjacent the surface to be coated while maintaining the applicator through which microwave energy is introduced at substantially atmospheric pressure.

Abstract: A laser ablation method for forming a fluorinated superconducting Y-Ba-Cu-O thin film on a sapphire substrate is disclosed, which comprises the steps of: (1) depositing a barrier layer of BaAl.sub.2 O.sub.4 on the sapphire substrate; (2) placing the coated substrate and a tagret in a deposition chamber, said target including fluorine, barium, yttrium, copper and oxygen; (3) providing a background atmosphere including at least partial pressure of O.sub.2 within the chamber; (4) heating the coated substrate to a temperature above ambient; (5) laser-ablating the target material onto the heated substrate while controlling the partial pressure of O.sub.2 in said background atmosphere and the temperature of said heated substrate so that the as-deposited thin film on said substrate is superconductive.

Abstract: A method for the low temperature fabrication of doped polycrystalline semiconductor alloy material. The method includes the steps of exposing a body of semiconductor alloy material to a reaction gas containing at least a source of the dopant element, and establishing an electrical potential sufficient to sputter etch the surface of said layer, while decomposing the reaction gas. This allows for the deposition of a layer of doped amorphous semiconductor alloy material upon the body of semiconductor alloy material. Thereafter, the doped layer of amorphous semiconductor alloy material is exposed to an annealing environment sufficient to at least partially crystallize said amorphous material, and activate the dopant element.

Abstract: A method of depositing a layer of doped or undoped wide band gap oxide material by chemical spray pyrolysis, upon a continuously advancing, elongated web of substrate material in a continuous, roll-to-roll process.

Abstract: Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material beneath the body of chalcogenide material so as to carefully define the filament location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eliminated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of insulator material which is deposited only after the chalcogenide material has been formed. This improved structure demonstrates the advantages of higher fabrication yields and more repeatable electrical switching characteristics.

Abstract: An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.

Abstract: A parallel distributed processor comprises matrices of unit cells arranged in a stacked configuration. Each unit cell includes a chalcogenide body which may be set and reset to a plurality of values of a given physical property. Interconnections between the unit cells are established via the chalcogenide materials and the pattern and strength of the interconnections is determined by the set values of the chalcogenide. The processor is readily adapted to the construction of neural network computing systems.

Abstract: A window assembly for transmitting relatively high power microwave energy from a waveguide, held at substantially atmospheric pressure levels, into a microwave reaction chamber at sub-atmospheric pressure levels. The window assembly provides for the transmission of microwave energy to generate a glow discharge plasma without suffering from catastrophic failure as a result of excessive temperature and pressure conditions.

Abstract: A state changeable memory alloy and device employing same. The memory alloy is capable of changing from a first state to a second state in response to the input of energy, such as projected optical beam energy, electrical energy or thermal energy. The alloy has a first detectable characteristic when in the first state and a second detectable characteristic when in the second state. It is further characterized in that the first state comprises a single phase, and the second state comprises either: (1) a single phase having the same composition as the first phase or (2) a plurality of phases which have substantially similar crystallization temperatures and kinetics.

Abstract: A window assembly for transmitting relatively high power microwave energy from a waveguide, held at substantially atmospheric pressure levels, into a microwave reaction chamber at sub-atmospheric pressure levels. The window assembly provides for the transmission of microwave energy to generate a glow discharge plasma without suffering from catastrophic failure as a result of excessive temperature and pressure conditions.

Abstract: A thin film, fluorinated, ceramic defect-oxide type superconducting material grown on a substrate such as sapphire or stainless steel. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess a perovskite-type lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducing material on the substrate, which is heated during the deposition process. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities.

Abstract: Disclosed is a reversible, electrochemical cell having a high electrochemical activity, hydrogen storage negative electrode. The negative electrode is formed of a reversible, multicomponent, multiphase, electrochemical hydrogen storage alloy. The hydrogen storage alloy is capable of electrochemically charging and discharging hydrogen in alkaline aqueous media. In one preferred exemplification the hydrogen storage alloy is a member of the family of hydrogen storage alloys, dericed from the V-Ti-Zr-Ni and V-Ti-Zr-Ni-Cr alloys in which the V, Ti, Zr, Ni and Cr are partially replaced by one or more modifiers, and the alloy has the composition:(V.sub.y'-y Ni.sub.y Ti.sub.x'-x Zr.sub.x Cr.sub.z).sub.a M'.sub.b M".sub.c M.sub.d.sup.ivwhere x' is between 1.8 and 2.2, x is between 0 and 1.5, y' is between 3.6 and 4.4, y is between 0.6 and 3.5, z is between 0.00 and 1.44, a designates that the V-Ni-Ti-Zr-Cr component, as a group is from 70 to 100 atomic percent of the alloy, b,c,d,e, . . .

Abstract: A semiconductor body includes ordered clusters of less then 100 angstroms in size and preferably, no more than 12 to 30 angstroms in size. The material is characterized by a decoupling of physical properties of the material from the morphology of the material.

Abstract: A multilayered, light-scattering back reflector for a photovoltaic device, said back reflector including a first relatively hard, textured layer atop a substrate and a second highly reflective layer conformally disposed atop the first layer. The back reflector may further include a third light scattering layer formed atop said second layer, said third layer adapted to further provide a barrier layer between the body of semiconductor material from which the photovoltaic device is formed and the multilayered back reflector.

Abstract: Disclosed is a reversible, electrochemical cell having a high electrochemical activity, hydrogen storage negative electrode. The negative electrode is formed of a reversible, multicomponent, multiphase, electrochemical hydrogen storage alloy. The hydrogen storage alloy is capable of electrochemically charging and discharging hydrogen in alkaline aqueous media. In one preferred exemplification the hydrogen storage alloy is a member of the family of hydrogen storage alloys, derived from the V-Ti-Zr-Ni and V-Ti-Zr-Ni-Cr alloys in which the V, Ti, Zr, Ni and Cr are partially replaced by one or more modifiers, and the alloy has the composition:(V.sub.y'-y Ni.sub.y Ti.sub.x'-x Zr.sub.x Cr.sub.z).sub.a M'.sub.b M".sub.c M.sub.d.sup.ivwhere x' is between 1.8 and 2.2, x is between 0 and 1.5, y' is between 3.6 and 4.4, y is between 0.6 and 3.5, z is between 0.00 and 1.44, a designates that the V-Ni-Ti-Zr-Cr component as a group is from 70 to 100 atomic percent of the alloy, b,c,d,e, . . .

Abstract: A method of depositing high quality thin film at a high rate of deposition through the formation of a high flux of activated precursor species of a precursor deposition gas by employing a substantial pressure differential between the pressure adjacent the aperture in a conduit from which said precursor deposition gas is introduced into the interior of a vacuumized enclosure and the background pressure which exits in said enclosure. As the precursor deposition gas is introduced into said enclosure, a high density plume of said activated precursor species are formed therefrom due to an electromagnetic field established in an activation region adjacent said aperture. The pressure differential is sufficient to cause those activated precursor species to be deposited upon a remotely positioned substrate. In order to obtain a sufficient pressure differential, it is preferred that the flow of the precursor deposition gas reaches transonic velocity.

Abstract: An electronic device of the type including a thin film body having a superposed metallic electrode has short circuit defects therein passivated by a conversion process in which the electrical resistivity of the metallic electrode material is increased proximate the defect regions. Conversion is accomplished by exposing the metallic electrode material to a conversion reagent and activating the reagent proximate the defect regions. The process may be utilized for a variety of differently configured devices, and may be readily adapted for use in a roll-to-roll device fabrication process.