Abstract: A solid state sensor that is ideally well suited for detecting the presence of ozone in an atmosphere under ambient conditions. A metal oxide semiconductor is placed upon a glass substrate by heating the substrate to about 1200.degree. F. and then depositing molten granules of the metal oxide upon the heated substrate whereby the granules become fused to the substrate and each other to form a rough textured coating. The oxide coating is machined to a desired thickness using any one of many suitable machining operations.

Abstract: A means for detecting and/or measuring the presence of ozone in an atmosphere such as air. A solid state sensor that is capable of changing its conductivity in the presence of ozone is located within a housing along with an ultraviolet lamp and a stream of the sampled atmosphere caused to pass over the sensor. After exposure to ozone in the atmosphere, the sensor is restored to its initial or start of sensing state by flooding it with ultraviolet radiation produced by the lamp.

Abstract: A detecting element for sensing the presence of higher than normal concentrations of ozone in air at ambient temperatures and pressures. The element is formed of a "lower" oxide of a semiconductor having a variable valence. In the presence of ozone, two free electrons in the conductive band of the semiconductor combine with dissociated atomic oxygen to form a "higher" oxide of the semiconductor thereby changing the conductivity of the element. At least two electrodes are placed in spaced apart contact with the element to permit a current to be passed therethrough whereby the change in conductivity can be discerned.