Patents Assigned to EpiPhotonics Corp.
  • OPTICAL AMPLIFIER AND PRODUCTION METHOD THEREOF
    Publication number: 20100110536
    Abstract: A small-sized, highly efficient optical amplifier having a PLZT optical waveguide layer to which a rare earth element is added, and a method for manufacturing the same are provided. Disclosed is an optical amplifier including an optical waveguide layer, the optical waveguide layer including Pb1-xLax(ZryTi1-y)1-x/4 O3 (PLZT: 0<x<0.3, 0<y<1.0), being doped with Yb (ytterbium) in an amount of from 0.2 mol % to 11.0 mol %, and being a single crystal film formed by solid-phase epitaxial growth.
    Type: Application
    Filed: February 5, 2008
    Publication date: May 6, 2010
    Applicant: EpiPHOTONICS CORP.
    Inventors: Keiichi Nashimoto, Yoshiyuki Sugahara
  • Optical amplifier and fabrication method thereof
    Patent number: 7526176
    Abstract: An optical amplifier including an optical waveguide layer (for example channel-shaped optical waveguide layer) including Pb1?xLax(ZryTi1?y)1?x/4O3(PLZT: 0<x<0.3, 0<y<1.0) doped with a rare earth element at an amount of 0.2 mol % to 11.0 mol %, the optical waveguide layer (for example channel-shaped optical waveguide layer) being formed as a single crystal film by solid-phase epitaxial growth.
    Type: Grant
    Filed: March 22, 2007
    Date of Patent: April 28, 2009
    Assignee: EpiPhotonics Corp.
    Inventors: Keiichi Nashimoto, Yoshiyuki Sugahara