Abstract: An optical detection system for detecting an incident optical signal is described. The system includes an optical package adapted to collect the incident optical signal and directed it to a detector array that is coupled thereto. The array outputs electrical signals to be analyzed by a processor. The processor is adapted to iterate algorithms using the signals to calculate an incident angle of arrival for the incident optical signal and a range of the source of the optical signal to the system based on the angle of arrival calculation. The processor is further configured to discriminate the optical signal spectrally to calculate wavelengths thereof for false alarm rejection.

Abstract: The present invention relates to a susceptor system for an apparatus of the type adapted to treat substrates and/or wafers; the susceptor system is provided with a cavity (1) which acts as a chamber for the treatment of the substrates and/or wafers and which extends in a longitudinal direction and is delimited by an upper wall (2), by a lower wall (3), by a right-hand side wall (4), and by a left-hand side wall (5); the upper wall (2) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the lower wall (3) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the right-hand side wall (4) is constituted by at least one piece of inert, refractory and electrically insulating material; the left-hand side wall (5) is constituted by at least one piece of inert, refractory and electrically insulating material; the piece of the upper wall (2) is thus electrically well i

Abstract: An array of photon counting phototoreceivers is constructed as an imager with micro-digitized pixels. Each photoreciever comprises a vertical cavity optical amplifier (VCSOA) as an optical amplifier, an avalanche photodiode as detector and an analog-to-digital converter (ADC) in an integrated structure. The ADC serves as a 1-bit digitizer and uses a resonant tunneling bipolar transistor RTBT. While the preferred embodiment of the invention have been described, it will be apparent to those skilled in the art that various modifications may be made to the embodiments without departing from the spirit of the present invention. Such modifications are all within the scope of the present invention.

Abstract: The present invention relates to a susceptor system for an apparatus for the treatment of substrates and/or wafers, provided with a treatment chamber (1) delimited by at least two walls and with at least one heating solenoid (9); the susceptor system comprises at least one susceptor element (2, 3) delimited by an outer surface and made of electrically conducting material suitable for being heated by electromagnetic induction; the susceptor element (2, 3) is hollow; a first portion of the outer surface of the susceptor element (2, 3) is suitable for acting as a wall of the treatment chamber (1); a second portion of the outer surface of the susceptor element (2, 3) is suitable for being disposed close to the heating solenoid (9).

Abstract: A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.

Abstract: A vertical cavity semiconductor optical photoamplifer (VCSOA) is used as a modulating retro-reflector (MRR) as a pixel in an array. The boundary of the cavity in the VCSOA forms a mirror for reflecting an incident light as an amplified output.

Abstract: Alternate layers of wide band gap and narrow band gaps of different kinds of semiconductors are used to form multiple channels of a FET. The channels are doped or formed as 2-DEG/2-DHG in narrow band semiconductor by charge supply layer in the wide band gap semiconductor. The different kinds of semiconductors form heterojunctions to confine the electrons/holes in separate thin spikes layers. A number of spikes (3-10 nm thick) of different doped or 2-DEG/2-DHG concentrations in various channels can result in overall electron concentration gradient such as a 1/x3 electron/hole concentrations profile. Such an electron/hole concentration gradient can result in a linear variation of drain current with voltage to obtain a wide dynamic range.

Abstract: A support system (1) for an apparatus of the type able to treat substrates and/or wafers is described, said system comprising a fixed base element (10) having a substantially flat surface in which a substantially cylindrical seat (11) with a substantially flat bottom is formed, and a movable support element (20) having a substantially disc-shaped form, being housed inside the seat (11), being able to rotate about the axis of the seat (11) and having a substantially flat upper side provided with at least one cavity (21) for a substrate or wafer and a substantially flat bottom side; one or more passages (12) for one or more gas flows are provided, which passages (12) emerge inside the seat (11) in directions which are inclined and preferably skew with respect to its axis, in such a way as to lift and rotate the support element (20).

Abstract: Alternate layers of wide band gap and narrow band gaps of different kinds of semiconductors are used to form multiple channels of a FET. The channels are doped or formed as 2-DEG/2-DHG in narrow band semiconductor by charge supply layer in the wide band gap semiconductor. The different kinds of semiconductors form heterojunctions to confine the electrons/holes in separate thin spikes layers. A number of spikes (3–10 nm thick) of different doped or 2-DEG/2-DHG concentrations in various channels can result in overall electron concentration gradient such as a 1/x3 electron/hole concentrations profile. Such an electron/hole concentration gradient can result in a linear variation of drain current with voltage to obtain a wide dynamic range.

Abstract: This invention describes an approach for monolithically integrating all the components of a photoreceiver—optical amplifier, optical band-pass filter, and photodiode module—on a single chip. The photoreceiver array employs unique optical amplifier and conversion technologies that provides the ultra-sensitivity required for free space optical communications networks. As an example, by monolithically integrating a vertical cavity surface emitting laser-diode (VCSEL) optical preamplifier with a photodiode receiver and related amplifiers and filters on the same chip, sensitivities as low as ?47 dBm (62 photons/bit at 2.5 Gb/s), along with an order of magnitude reduction in size, weight, and power consumption over comparable commercial-off-the-shelf (COTS) components can be demonstrated.

Abstract: Two resonant tunneling diodes with hysteretic folding V-I characteristics are connected in series. The node voltage and the series current of the cell determine the memory state and there can be a large number of states. During writing, one writing pulse sets the pull-down RTD to one of the positive differential resistance region of the hysteretic V-I characteristic, and a second writing pulse sets the pull-up RTD to one of positive differential resistance region. During writing, the series current is sensed by measuring the colon ground current.

Abstract: More than one photodetectors, each sensitive to different wavelengths, are integrated on a common semiconductor substrate. The different photodetectors can be stacked over one another or placed laterally on the common substrate. Gratings may be placed over each photodetector to sharpen the spectral response. Three such photodetectors can form a pixel of an active matrix array for an image sensor. The different photodetectors in each pixel can be multiplexed electronically. The electronic circuits for activating the different photodetectors can be integrated on the same substrate.

Abstract: A two-dimensional memory comprises a matrix of multi-valued resonant tunneling diodes (RTD). Each memory cell has two series RTDs with hysteretic folding V-I characteristics. The memory state is determined by the node voltage between the two RTDs and the series current. Each memory cell has two terminals connected to two bit lines through word line switches. The two bit lines are fed with two sets of multi-valued data and are written into the cell by two consecutive pulses to set the operating point. The two sets of multi-valued data are converted by two D/A converters from two sub-words of the binary digital word. The memory state is read by the sensing the voltages at the two terminals, or voltage at one terminal and the current through the other terminal.