Abstract: In some embodiments, the present application provides a swallowable capsule comprising pseudo conductive high-electron-mobility transistors (PC-HEMTs), and its use in an intestinal and gut diagnostics and gut motility monitoring.

Abstract: In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for biometric authentication of a user. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts, which maybe either ohmic or non-ohmic (capacitively-coupled), are connected to the formed 2DEG channel and to electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system.

Abstract: In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for air quality monitoring. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts are non-ohmic (capacitively-coupled) and connected to the formed 2DEG channel and to the electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system. The metal gate electrode is placed between the source and drain areas on or above the barrier layer, which may be recessed or grown to a specific thickness.

Abstract: In some embodiments, the PC-HEMT based microelectronic sensors are used in cardiovascular and pulmonary monitoring, detection and measurements of electrocardiography signals, detection of the primary heart activity signals and measurements of the central venous pressure and heart rate variability, measurements of the right and left atrium pressures, recording a phonocardiogram, detection of the S2-split phenomena, measurements of breath dynamics and lung activity diagnostics, monitoring the brain activity and measuring and monitoring electrical signals associated with an electroencephalogram, and eye pressure diagnostics.

Abstract: In some embodiments, the PC-HEMT based microelectronic sensors are used in recording physiological and non-physiological sounds as hypersensitive microphones. Recording the physiological sounds is associated with the S1/S2 heart split phenomena and phonocardiography.

Abstract: In some embodiments, an open-gate pseudo-conductive high-electron mobility transistor (PC-HEMT) includes a multilayer hetero-junction structure made of III-V single-crystalline or polycrystalline semiconductor materials. This structure includes at least one buffer layer and a barrier layer, and is deposited on a substrate layer. The PC-HEMT further includes a two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting channel formed at the interface between the buffer layer and the barrier layer, source and drain contacts, either ohmic or non-ohmic, connected to the 2DEG or 2DHG conducting channel, electrical metallizations for connecting the PC-HEMT to an electric circuit, and an open gate area between the source and drain contacts.

Abstract: The present application describes embodiments of a radio-frequency identification (RFID) sensor based on a combinationof a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting structure, and its use in chemical detection and (bio)molecular diagnostics. The SAW RFID sensor chip contains apiezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises atleast two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystallinesemiconductor materials, such as GaN/AlGaN. Interdigitated transducers (IDTs) transducing SAWs are installed on top of thebarrier layer. A 2DEG or 2DHG conducting channel is formed at the interface between the buffer and barrier layers and provideselectron or hole current in the system between the non-ohmic (capacitively-coupled) source and drain contacts connected to the formed channel.

Abstract: The present application describes embodiments of a zero-power radio-frequency identification (RFID) sensor chip based on a combination of a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional holegas (2DHG) conducting structure, and its use as an ultrasensitive microphone for material and structure sensing. The SAW RFID sensor contains a piezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises at least two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystalline semiconductor materials, such as Ga N/Al Ga N. Interdigitated transducers (IDTs) transducing SAWs are installed on top of the barrier layer.