Patents Assigned to EQ TECH PLUS CO., LTD.
  • Publication number: 20240177989
    Abstract: According to one embodiment, a method of forming an oxide film by using a deposition apparatus includes depositing an insulating film on a silicon substrate, and forming an SiO2 thin film between the silicon substrate and the insulating film by performing annealing using OH radicals on the insulating film by using the deposition apparatus.
    Type: Application
    Filed: February 8, 2024
    Publication date: May 30, 2024
    Applicant: EQ TECH PLUS CO., LTD.
    Inventors: Dong Hwa SHIN, Yong Weon KIM
  • Patent number: 11661656
    Abstract: According to an embodiment of the present disclosure, a thin film forming apparatus includes a chamber, a plurality of gas inlets that are formed at an upper portion of the chamber and receive at least two reaction gas and precursors for radical reaction, and a radical unit configured to generate radicals by reacting the reaction gas provided through the gas inlet and deposit a thin film on a substrate by spraying the radicals and the precursors downward. The radical unit is configured with a plurality of plates, a precursor spray path is configured to be sprayed from the radical unit after the precursors are sprayed to a plurality of paths greater than precursor spray paths of the gas inlet in an uppermost plate among the plurality of plates, and a reaction gas spray path is configured not to overlap with the precursor spray path.
    Type: Grant
    Filed: December 29, 2020
    Date of Patent: May 30, 2023
    Assignee: EQ TECH PLUS CO., LTD.
    Inventors: Dong Hwa Shin, Yong Weon Kim
  • Publication number: 20210222301
    Abstract: According to an embodiment of the present disclosure, a thin film forming apparatus includes a chamber, a plurality of gas inlets that are formed at an upper portion of the chamber and receive at least two reaction gas and precursors for radical reaction, and a radical unit configured to generate radicals by reacting the reaction gas provided through the gas inlet and deposit a thin film on a substrate by spraying the radicals and the precursors downward. The radical unit is configured with a plurality of plates, a precursor spray path is configured to be sprayed from the radical unit after the precursors are sprayed to a plurality of paths greater than precursor spray paths of the gas inlet in an uppermost plate among the plurality of plates, and a reaction gas spray path is configured not to overlap with the precursor spray path.
    Type: Application
    Filed: December 29, 2020
    Publication date: July 22, 2021
    Applicant: EQ TECH PLUS CO., LTD.
    Inventors: Dong Hwa SHIN, Yong Weon KIM