Abstract: A semiconductor radiation detector having a semiconductor substrate and first and second metal layers. The semiconductor substrate has substantially planar upper and lower opposing surfaces which have respective first and second surface areas. The first and second surface areas are defined by prospective dice lines. The first metal layer is on the substantially planar upper surface such that the first metal layer will have a surface area less than the first surface area of the substantially planar upper surface as defined by spaces on the substantially planar upper surface between the first metal layer and the prospective dice lines which define the first surface area. The second metal layer is on the substantially planar lower opposing surface.

Abstract: A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.

Abstract: A method of making a semiconductor radiation detector wherein the metal layers which serve as the cathode and anode electrodes are recessed from the designated prospective dice lines which define the total upper and lower surface areas for each detector such that the dicing blade will not directly engage the metal during dicing and therefore prevent metal from intruding upon (smearing) the vertical side walls of the detector substrate.

Abstract: In a method of count correction for pixels of a pixilated photon counting detector, the average count value output by each of a plurality of pixels during a period of time is determined. A product is determined of the actual average count value and a multiplying correction factor. A corrected count value is then determined for the pixel equal to a sum of the product and an additive correction factor. The multiplying correction factor equals a square root of a quotient of a desired average count value to be output by each of the plurality of pixels during the period of time divided by the actual average count value. The additive correction factor equals a product of the multiplying correction factor and the actual average count value subtracted from the desired average count value.

Abstract: In a method of count correction for pixels of a pixilated photon counting detector, the average count value output by each of a plurality of pixels during a period of time is determined. A product is determined of the actual average count value and a multiplying correction factor. A corrected count value is then determined for the pixel equal to a sum of the product and an additive correction factor. The multiplying correction factor equals a square root of a quotient of a desired average count value to be output by each of the plurality of pixels during the period of time divided by the actual average count value. The additive correction factor equals a product of the multiplying correction factor and the actual average count value subtracted from the desired average count value.

Abstract: A room temperature radiation detector is made from a semi-insulating Cd1-xZnxTe crystal, where 0?x?1, having a first electrode made of Pt or Au on one surface of the crystal and a second electrode of Al, Ti or In on another surface of the crystal. In use of the crystal to detect radiation events, an electrical bias is applied between the first and second electrodes.

Abstract: A semiconductor radiation detector (1?, 1?, 1??, 1??) includes a body of semiconducting material (2) responsive to ionizing radiation for generating electron-hole pairs in the bulk of said body (2). A conductive cathode (4) is disposed on one side of the body (2) and an anode structure (6) is disposed on the other side of the body (2). The anode structure (6) includes a first set of spaced elongated conductive fingers (8) in contact with the body (2) and defining between each pair of fingers thereof an elongated gap (10) and a second set of spaced elongated conductive fingers (12) positioned above the surface of the body (2) that includes spaced elongated conductive fingers (8). Each finger of the second set of spaced elongated conductive fingers (12) overlays, either partially or wholly, the elongated gap between a pair of adjacent fingers of the first set of spaced elongated conductive fingers (8).

Abstract: A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.

Abstract: A radiation detection system includes a radiation detector and a DC/DC converter that induces an electric field in the radiation detector. A counter circuit outputs a pulse related to the energy of each incoming radiation event on the radiation detector. The peak amplitude of each pulse output by the counter circuit is converted into a digital equivalent value. A means for processing processes each digital equivalent value and counts a number of pulses output by the counter circuit over an interval of time. A port has one or more data lines connected to the means for processing and one or more power lines connected to the DC/DC converter. The port facilitates a connection to a host system which provides a single DC voltage to the DC/DC converter which converts the single DC voltage into a higher level voltage that induces the electric field in the radiation detector.