Abstract: A method of forming an Sn—Ag—Cu ternary alloy thin-film of the present invention forms the ternary alloy thin-film by electroplating. A plating bath contains an Sn compound, an Ag compound, a Cu compound, an inorganic chelating agent and an organic chelating agent. The inorganic chelating agent is one of a polymerized phosphate-based chelating agent and a chelating agent represented by a chemical formula (I): MFX(X—Y)— . . . (I) where M is an arbitrary metal, X is an arbitrary natural number and Y is an oxidation number of M. The organic chelating agent is one of porphyrins, dipivaloylmethane, phthalocyanines and a compound represented by a chemical formula (II): R—(CH2CH2O)n-A . . . (II) where R is an alkyl group having a carbon number of 8 to 30, A is CH2COONa or CH2SO4Na and n is a natural number.

Abstract: An aluminum stabilization stacked body formed by stacking a stabilization layer formed with a metal and having a thickness of 0.001-1 ?m with any of a sputtering method, a deposition method and an ion plating method on a whole surface of a thin film having a surface formed with aluminum.

Abstract: A material for an electronic component having a plating layer A formed of metals X and Y mixed with each other on a base metal material and a coating layer B formed of the metal X provided on the plating layer A is provided, whereby wettability of soldering is satisfactory ensured, degradation of solderability and appearance is prevented and generation of whiskers can also be prevented.