Patents Assigned to FEDERALNOE GOSUDARSTVENNOE UNITARNOE PREDPRIATIE "NAUCHNO-ISSLEDOVATELSKIY
  • Publication number: 20110269297
    Abstract: The invention can be used for producing different luminescent materials and as a basis for producing subminiature light-emitting diodes, white light sources, single-electron transistors, nonlinear optical devices and photosensitive and photovoltaic devices. The inventive method for producing semiconductor quantum dots involves synthesizing nanocrystal nuclei from a chalcogen-containing precursor and a precursor containing a group II or IV metal using an organic solvent and a surface modifier. The method is characterized in that (aminoalkyl)trialkoxysilanes are used as the surface modifier , core synthesis is carried out at a permanent temperature ranging from 150 to 250 C for 15 seconds to 1 hour and in that the reaction mixture containing the nanoclystal is additionally treated by UV-light for 1-10 minutes and by ultrasound for 5-15 minutes.
    Type: Application
    Filed: August 18, 2009
    Publication date: November 3, 2011
    Applicant: FEDERALNOE GOSUDARSTVENNOE UNITARNOE PREDPRIATIE "NAUCHNO-ISSLEDOVATELSKIY
    Inventors: Roman Vladimirovich Novichkov, Maxim Sergeevich Wakstein, Ekaterina Leonidovna Nodova, Aleksey Olegovich Maniashin, Irina Ivanovna Taraskina