Abstract: A method of fabricating a laterally diffused metal-oxide-semiconductor (LDMOS) transistor device having a bipolar transistor for electrostatic discharge (ESD) protection includes doping a substrate to form a body region of the LDMOS transistor device in the substrate, the body region having a first conductivity type, forming a doped isolating region of the LDMOS transistor device in the substrate, the doped isolating region having a second conductivity type and surrounding a device area of the LDMOS transistor device in which the body region is disposed, forming a base contact region of the bipolar transistor, the base contact region being disposed within the body region and having the first conductivity type, and doping the substrate to form an isolation contact region for the doped isolating region that defines a collector region of the bipolar transistor, to form source and drain regions of the LDMOS transistor device in the substrate, and to form an emitter region of the bipolar transistor within the body

Abstract: A register file module comprising at least one register array comprising a plurality of latch devices is described. The plurality of latch devices is arranged to individually provide memory bit-cells when the register file module is configured to operate in a first, functional operating mode, and at least one clock control component is arranged to receive a clock signal and to propagate the clock signal to the latch devices within the at least one register array. The register file module is configurable to operate in a second, scan mode in which the latch devices within the at least one register array are arranged into at least one scan chain. The at least one clock control component is arranged to propagate the clock signal to the latch devices within the at least one register array such that alternate latch devices within the at least one scan chain receive an inverted form of the clock signal.

Abstract: A process integration is disclosed for fabricating non-volatile memory (NVM) cells having spacer control gates (108) along with a high-k-metal-poly select gate (121, 123, 127) and one or more additional in-laid high-k metal CMOS transistor gates (121, 124, 128) using a gate-last HKMG CMOS process flow without interfering with the operation or reliability of the NVM cells.

Abstract: A process integration is disclosed for fabricating non-volatile memory (NVM) cells having recessed control gates (118, 128) on a first substrate area (111) which are encapsulated in one or more planar dielectric layers (130) prior to forming in-laid high-k metal select gates and CMOS transistor gates (136, 138) in first and second substrate areas (111, 113) using a gate-last HKMG CMOS process flow without interfering with the operation or reliability of the NVM cells.

Abstract: A microcontroller unit comprises a reset controller operably coupled to a plurality of logic elements of the microcontroller unit. Low voltage detection logic is operably coupled to the reset controller and arranged to provide a plurality of low voltage interrupt signals to a number of respective logic elements of the microcontroller unit via the reset controller. A method of operating a microcontroller unit is also described.

Abstract: A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.