Patents Assigned to Fuji Eletric Co., Ltd.
  • Method for forming thermal oxide film of silicon carbide semiconductor device
    Patent number: 6136727
    Abstract: In a method for forming a thermal oxide film of a silicon carbide semiconductor device, a preliminary treatment is conducted in which a silicon carbide substrate is heated to 800 to 1200.degree. C., in an atmosphere comprising hydrogen or a mixture of hydrogen and inert gas, and then a silicon dioxide film is formed on the substrate by thermal oxidation. A slight amount of hydrochloric acid gas may be added to the atmosphere for the preliminary treatment.
    Type: Grant
    Filed: December 18, 1998
    Date of Patent: October 24, 2000
    Assignee: Fuji Eletric Co., Ltd.
    Inventor: Katsunori Ueno