Abstract: This polishing pad has a polishing layer that comprises a polyurethane resin foam derived from an isocyanate-terminated prepolymer and a curing agent, wherein: the distance between hard segments in the polishing layer as measured by small-angle X-ray scattering is 9.5 nm or less; or the ratio (NC80/CC80) of the content proportion by weight (NC80) of an amorphous phase in the polishing layer as measured by pulse NMR at 80° C. to the content proportion by weight (CC80) of a crystalline phase in the polishing layer as measured by pulse NMR at 80° C. is 2.6-3.1, and the ratio (NC40/CC40) of the content proportion by weight (NC40) of an amorphous phase in the polishing layer as measured by pulse NMR at 40° C. to the content proportion by weight (CC40) of a crystalline phase in the polishing layer as measured by pulse NMR at 40° C. is 0.5-0.9.

Abstract: A polishing pad is equipped with a polishing layer having a polyurethane sheet, wherein a tan ? peak value change rate determined by formula: tan ? peak value change rate=|tan ? peakwet?tan ? peakdry|/tan ? peakdry×100, is not more than 15%, where tan ? peakwet represents the peak value of the loss tangent tan ?, of the polyurethane sheet in a wet state after being immersed in water for three days, within a temperature range of 20-100° C. in a tensile mode under an initial load of 148 g with a strain range of 0.1% at a measurement frequency of 1.6 Hz, and tan ? peakdry represents the peak value of the loss tangent tan ?, of the polyurethane sheet in a dry state without being immersed in water, within a temperature range of 20-100° C. in a tensile mode under an initial load of 148 g with a strain range of 0.1% at a measurement frequency of 1.6 Hz.

Abstract: The present invention provides a polishing pad that can suppress variations in light transmittance or a polishing pad that can reduce adhesion and sticking of polishing swarf to the surface on the polishing surface side of the light-transmitting resin member (window member).

Abstract: A polishing pad includes: a polishing layer having a polyurethane sheet containing substantially spherical cells, wherein E?(90%)/E?(30%) falls within a range of 0.4 to 0.7, where E?(90%) represents a storage modulus of the polyurethane sheet that has been exposed to an environment with a temperature of 23° C. and a relative humidity of 90%, as measured in a tension mode at 40° C. with an initial load of 148 g, a strain range of 0.1%, and a measurement frequency of 1.6 Hz, and E?(30%) represents a storage modulus of the polyurethane sheet that has been exposed to an environment with a temperature of 23° C. and a relative humidity of 30%, as measured in a tension mode at 40° C. with an initial load of 148 g, a strain range of 0.1%, and a measurement frequency of 1.6 Hz. Also provided is a method for manufacturing the polishing pad.

Abstract: A polishing pad comprising a knitted fabric constituted by warp knitting or weft knitting, and a resin with which the knitted fabric is impregnated, and having a cross section cut in a surface direction of the knitted fabric, as a polishing surface.

Abstract: A lapping material having a knitted fabric constituted by warp knitting or weft knitting, and a resin with which the knitted fabric is impregnated.

Abstract: A polishing pad is equipped with a polishing layer having a polyurethane sheet, wherein a tan ? peak value change rate determined by formula: tan ? peak value change rate=|tan ? peakwet?tan ? peakdry|/tan ? peakdry×100, is not more than 15%, where tan ? peakwet represents the peak value of the loss tangent tan ?, of the polyurethane sheet in a wet state after being immersed in water for three days, within a temperature range of 20-100° C. in a tensile mode under an initial load of 148 g with a strain range of 0.1% at a measurement frequency of 1.6 Hz, and tan ? peakdry represents the peak value of the loss tangent tan ?, of the polyurethane sheet in a dry state without being immersed in water, within a temperature range of 20-100° C. in a tensile mode under an initial load of 148 g with a strain range of 0.1% at a measurement frequency of 1.6 Hz.

Abstract: A polishing pad comprising a knitted fabric constituted by warp knitting or weft knitting, and a resin with which the knitted fabric is impregnated, and having a cross section cut in a surface direction of the knitted fabric, as a polishing surface.

Abstract: A polishing pad includes: a polishing layer having a polyurethane sheet containing substantially spherical cells, wherein E?(90%)/E?(30%) falls within a range of 0.4 to 0.7, where E?(90%) represents a storage modulus of the polyurethane sheet that has been exposed to an environment with a temperature of 23° C. and a relative humidity of 90%, as measured in a tension mode at 40° C. with an initial load of 148 g, a strain range of 0.1%, and a measurement frequency of 1.6 Hz, and E?(30%) represents a storage modulus of the polyurethane sheet that has been exposed to an environment with a temperature of 23° C. and a relative humidity of 30%, as measured in a tension mode at 40° C. with an initial load of 148 g, a strain range of 0.1%, and a measurement frequency of 1.6 Hz. Also provided is a method for manufacturing the polishing pad.

Abstract: A polishing pad comprising a resin-containing polishing cloth having a polishing cloth base impregnated with a polyurethane resin and silicon carbide, wherein the silicon carbide has a particle diameter in a range from 0.2 to 3.0 ?m, and the content of the silicon carbide in the resin-containing polishing cloth is in a range from 60 to 500 parts by mass relative to 100 parts by mass of the polishing cloth base.

Abstract: Provided is a polishing pad capable of sufficiently reducing minute defects to be generated after polishing on a workpiece which are detected in measurement for a particle size of 26 nm or smaller and capable of providing the workpiece with excellent surface flatness. The polishing pad includes a polishing layer having a polishing surface to polish a workpiece, and includes, in the side opposite to the polishing surface of the polishing layer, an intermediate layer having an amount of deformation C larger than that of the polishing layer, a hard layer having an amount of deformation C smaller than that of the polishing layer, and a cushion layer having an amount of deformation C larger than that of the intermediate layer, in which each of the amounts of deformations C is defined as an amount of deformation in the case of compression in a thickness direction, and the intermediate layer, the hard layer, and the cushion layer are laminated in this order from the side of the polishing layer.

Abstract: Provided is a polishing pad which is capable of providing a high flatness to a polishing workpiece and suppressing the formation of scratches, and a method therefor. The polishing pad comprises a foamed urethane sheet on the surface which includes closed cells and open cells and which satisfies the following requirements: (1) an open cell ratio is 20-80 vol % where the total volume of closed cells and open cells is taken as 100 vol %, (2) the ratio [tan ? (wet/dry) ratio] of a loss factor tan ? in a water-absorption state to that in a dry state is 1.3-1.7, the loss factors being measured according to JIS K7244-4 with an initial load of 20 g at a measuring frequency of 1 Hz at a temperature of 26° C. in a tensile mode over a strain range from 0.01 to 0.1%, and (3) the Shore DO hardness according to ASTM D2240 is 60-80.

Abstract: Provided are a method for producing a finish polishing pad and the polishing pad which allow formation of a stable film and enables polishing with fewer polishing scratches. The method includes the steps of: dissolving a composition for forming polyurethane resin film containing a polyurethane resin and an additive(s) in a solvent capable of dissolving the resin; removing an insoluble component(s) to make the content of the insoluble component(s) in the solution less than 1% by mass relative to the total mass of the composition; adding a poor solvent to the solution from which the insoluble component(s) has(have) been removed, followed by mixing, the amount of the poor solvent added being calculated according to a defined Formula 1; and forming a film from the mixture solution on the film formation substrate by a wet coagulation method, to thereby form the polyurethane resin film.

Abstract: A polishing pad for polishing a semiconductor device and manufacturing method therefor, the polishing pad comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein an M-component of the polyurethane-polyurea resin foam has a spin-spin relaxation time T2 of 160 to 260 ?s, the polyurethane-polyurea resin foam has a storage elastic modulus E? of 1 to 30 MPa, the storage elastic modulus E? being measured at 40° C. with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm3. The polishing pad remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and can be used for primary polishing or finish polishing.

Abstract: The present invention provides a polishing pad including a polishing member having a polishing surface, wherein the polishing member contains a material having dilatancy characteristics.

Abstract: Provided is a polishing pad which is capable of providing a high flatness to a polishing workpiece and suppressing the formation of scratches, and a method therefor. The polishing pad comprises a foamed urethane sheet on the surface which includes closed cells and open cells and which satisfies the following requirements: (1) an open cell ratio is 20-80 vol % where the total volume of closed cells and open cells is taken as 100 vol %, (2) the ratio [tan ? (wet/dry) ratio] of a loss factor tan ? in a water-absorption state to that in a dry state is 1.3-1.7, the loss factors being measured according to JIS K7244-4 with an initial load of 20 g at a measuring frequency of 1 Hz at a temperature of 26° C. in a tensile mode over a strain range from 0.01 to 0.1%, and (3) the Shore DO hardness according to ASTM D2240 is 60-80.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and has a density D in a range from 0.30 to 0.60 g/cm3, the hard segment content (HSC) being determined by the following formula (1): HSC=100×(r?1)×(Mdi+Mda)÷(Mg+r×Mdi+(r?1)×Mda)??(1).

Abstract: The present invention provides a lapping plate, which provides a high lapping rate and also can suppress the generation of scratches on a surface of a polishing workpiece. The present invention provides a resin lapping plate comprising a resin sheet comprising a thermosetting polyurethane resin and having an opening rate of 10 to 50% and a Young's modulus of 7.0×107 to 5.0×108 N/m2.

Abstract: A polishing pad comprising a resin-containing polishing cloth having a polishing cloth base impregnated with a polyurethane resin and silicon carbide, wherein the silicon carbide has a particle diameter in a range from 0.2 to 3.0 ?m, and the content of the silicon carbide in the resin-containing polishing cloth is in a range from 60 to 500 parts by mass relative to 100 parts by mass of the polishing cloth base.

Abstract: A test reagent container includes: a bottom part; a peripheral wall part on the periphery of the bottom part; a storage part which opens upward and with an internal diameter of an inner peripheral wall decreased with depth; a film which seals the opening of the storage part; a discharge channel which penetratingly passes from an inner bottom surface of the storage part to the bottom part of the container body; a projecting part formed downwardly projecting from the bottom part to seal an outlet of the discharge channel; a breakable part including a thick-walled part and a thin-walled part thinner than the thick-walled part formed on the periphery of the projecting part. The breakable part is broken when the projecting part is depressed from outside of the container, the projecting part is inserted into the inside of the discharge channel, and the sealed state of the outlet is released.