Abstract: A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.

Abstract: To provide a dressing apparatus capable of uniformly dressing a polishing pad. The apparatus includes first and second dressing grind stones 51 and 52 which grind polishing pads 17 and 18 by moving in a radial direction of upper and lower polishing plates 12 and 14 while abutting on corresponding polishing pads 17 and 18, in which the first and second dressing grind stones 51 and 52 are set so as to have: an inner side region portion P; an outer side region portion Q; and an intermediate region portion R, wherein the length of each of the inner side region portion P and the outer side region portion Q extending in a circumferential direction of the polishing plates 12 and 14 is longer than the length of the intermediate region portion R extending in a circumferential direction of the polishing plates.

Abstract: The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

Abstract: The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

Abstract: A polishing head including, below a polishing head body, a rubber film held by a disk-shaped mid plate and an annular guide ring disposed around the rubber film holding the back surface of the workpiece on a lower face portion of the rubber film. The polishing head also includes a base member that is coupled to a polishing head body through an elastic film and holds the guide ring and the mid plate such that the lower surface of the guide ring does not contact the polishing pad during polishing. The polishing head and polishing apparatus, are operable in both of the rough polishing process and final polishing process, that can stably achieve predetermined high flatness and high polishing stock removal uniformity in polishing of a workpiece and can obtain a workpiece with fewer fine particles having a diameter of 45 nm or more.

Abstract: The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

Abstract: A method of manufacturing semiconductor wafers which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers includes steps wherein a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer, by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained.

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract: In the double-side polishing apparatus, one end part of a slurry supply hole has a female-tapered face whose inner diameter is gradually increased toward a polishing face of a polishing plate. A pad hole, which corresponds to the slurry supply hole, is formed in a polishing pad covering the slurry supply hole. An edge of the pad hole is located in the slurry supply hole. A fixation pipe, in which a flange section facing the female-tapered face is formed at one end part, is fixed in the slurry supply hole. The edge of the pad hole is sandwiched and held between the female-tapered face of the slurry supply hole and the flange section of the fixation pipe.

Abstract: A polishing apparatus which includes a polishing head for holding a work, and a polishing plate on which a polishing pad is adhered. The polishing head includes a holding plate, an elastic sheet member fixed to an edge of the holding plate, a ring-shaped template fixed to an outer edge of a lower face of the elastic sheet member, a pressure chamber formed between a lower face of the holding plate and an upper face of the elastic sheet member, a seal ring having a main body part which is fitted to a supporting plate, a seal lip, which slidelingly contacts the elastic sheet member and divides the inside of the pressure chamber into an inner divided chamber and an outer divided chamber; and a fluid supply section for individually supplying a fluid to the divided chambers.

Abstract: The method of the present invention are capable of stabilizing a polishing rate, reducing number of times of performing dressing operations, improving work efficiency and extending a span of life of the polishing pad. The method for dressing a polishing pad, which has been used to polish a surface of a work by pressing the work onto the polishing pad fixed on a polishing plate with supplying slurry thereto, by using a grind stone, comprises the steps of: cleaning the polishing pad by supplying high-pressure cleaning water to the polishing pad; and dressing the polishing pad by moving a dressing grind stone, in the radial direction of the polishing pad, along a surface profile thereof, while performing the cleaning step.

Abstract: A method of manufacturing semiconductor wafers is provided which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers according to the present invention is a method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser beam after the marking step.

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract: A polishing head for holding a workpiece when a surface of the workpiece is polished and a polishing apparatus provided with the polishing head, and more particularly a polishing head for holding the workpiece on a rubber film and a polishing apparatus provided with the polishing head. The polishing head and the polishing apparatus provided with the polishing head that can adjust the polishing profile on the basis of the shape of the workpiece before polishing and can stably obtain good flatness.

Abstract: The double-side polishing apparatus is capable of uniformly polishing a wafer and highly preventing an outer edge of the wafer from being damaged. The apparatus comprises: a lower polishing plate and an upper polishing plate for polishing both sides of the wafer; a carrier having a main body part, in which a through-hole for holding the wafer is formed. Edges of the through-hole in an upper face and a lower face of the carrier are coated with coating layers, which are composed of an abrasion-resistant material and which have a prescribed width and a prescribed thickness. A resin cushion ring, which has a prescribed width and whose thickness is equal to that of the main body part of the carrier, is provided to an inner circumferential face of the thorough-hole. The wafer is held in the resin cushion ring.

Abstract: The method for adhering works is capable of polishing the works so as to have the same thickness. The method for adhering works is performed in a work adhering apparatus comprising: a press table; and a plurality of pressing heads being provided above the press table and capable of independently moving close to and away from the press table. The press table and the pressing heads press and adhere the works onto a plate with an adhesive agent. Each of the pressing heads presses and adheres the one work onto the plate at a constant pressure.

Abstract: Provided is a polishing apparatus comprising a lower stool (12), a motor (18a) and a speed reducer (19a) for driving the lower stool, and a box (17) for covering at least the portion of the lower stool below the working action face. The polishing apparatus polishes a wafer by forcing the wafer to contact the lower stool and by rotating the lower stool. The box has its inside separated by partitions (31a and 31b) into a plurality of regions, and the motor for driving the lower stool is arranged in a region other than the region containing the lower stool. The polishing apparatus can manufacture a wafer of a stable shape, irrespective of the time elapsed from the running start and the presence/absence of the stop of the polishing apparatus.

Abstract: The method of polishing a work is capable of reducing a polishing cost, polishing a surface of the work with high polishing accuracy and easily disposing used polishing liquid and used washing liquid. The method comprises the steps of: pressing the work onto a polishing member; feeding polishing liquid; and relatively moving the work with respect to the polishing member. Electrolytic reduced water produced by electrolyzing an electrolyte solution is used as the polishing liquid.

Abstract: A polishing head having a disklike carrier in which an annular projecting portion and a carrier-engagement portion are formed in a peripheral portion, a disklike head body in which a head-body-engagement portion is formed outside, a diaphragm for connecting the head body with the carrier, a spacer located between the carrier-engagement portion and the head-body-engagement portion in a part of the carrier-engagement portion and/or the head-body-engagement portion, in which the spacer abuts on the carrier-engagement portion and/or the head-body-engagement portion at the time of lifting the head body so that the workpiece is demounted from the polishing pad by lifting the carrier with it inclined. As a result, there is provided a polishing head in which the workpiece can be easily, safely and surely demounted from the polishing pad by lifting the polishing head holding the workpiece without overhanging the polishing head from the turn table and the like.

Abstract: A polishing head including, below a polishing head body, a rubber film held by a disk-shaped mid plate and an annular guide ring disposed around the rubber film holding the back surface of the workpiece on a lower face portion of the rubber film. The polishing head also includes a base member that is coupled to a polishing head body through an elastic film and holds the guide ring and the mid plate such that the lower surface of the guide ring does not contact the polishing pad during polishing. The polishing head and polishing apparatus, are operable in both of the rough polishing process and final polishing process, that can stably achieve predetermined high flatness and high polishing stock removal uniformity in polishing of a workpiece and can obtain a workpiece with fewer fine particles having a diameter of 45 nm or more.