Patents Assigned to Gallium Enterprises Pty Ltd.
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Patent number: 11081618Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.Type: GrantFiled: December 23, 2019Date of Patent: August 3, 2021Assignee: Gallium Enterprises Pty LtdInventors: Ian Mann, Satyanarayan Barik, Joshua David Brown, Danyu Liu
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Patent number: 11001926Abstract: A plasma generator is described which employs a partial PBN liner not only to minimise the loss of energetic gas species during film formation but also to reduce boron impurity levels introduced into the growing film relative to the use of a complete PBN liner. The use of such a plasma generator in a film forming apparatus and method of forming a film is also described.Type: GrantFiled: January 15, 2015Date of Patent: May 11, 2021Assignee: Gallium Enterprises Pty LtdInventors: Ian Mann, Satyanarayan Barik, Marie Wintrebert-Fouquet, Josh Brown, Paul Dunnigan
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Publication number: 20200127157Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.Type: ApplicationFiled: December 23, 2019Publication date: April 23, 2020Applicant: Gallium Enterprises Pty LtdInventors: Ian MANN, Satyanarayan BARIK, Joshua David BROWN, Danyu LIU
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Patent number: 10559711Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.Type: GrantFiled: June 18, 2019Date of Patent: February 11, 2020Assignee: Gallium Enterprises Pty LtdInventors: Ian Mann, Satyanarayan Barik, Joshua David Brown, Danyu Liu
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Patent number: 10546972Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.Type: GrantFiled: June 18, 2019Date of Patent: January 28, 2020Assignee: Gallium Enterprises Pty LtdInventors: Ian Mann, Satyanarayan Barik, Joshua David Brown, Danyu Liu
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Publication number: 20190305174Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.Type: ApplicationFiled: June 18, 2019Publication date: October 3, 2019Applicant: Gallium Enterprises Pty LtdInventors: Ian MANN, Satyanarayan BARIK, Joshua David BROWN, Danyu LIU
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Publication number: 20190305173Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.Type: ApplicationFiled: June 18, 2019Publication date: October 3, 2019Applicant: Gallium Enterprises Pty LtdInventors: Ian MANN, Satyanarayan BARIK, Joshua David BROWN, Danyu LIU
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Patent number: 10355165Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.Type: GrantFiled: November 6, 2018Date of Patent: July 16, 2019Assignee: Gallium Enterprises Pty LtdInventors: Ian Mann, Satyanarayan Barik, Joshua David Brown, Danyu Liu
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Publication number: 20190140134Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H2 and/or NH3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.Type: ApplicationFiled: November 6, 2018Publication date: May 9, 2019Applicant: Gallium Enterprises Pty LtdInventors: Ian MANN, Satyanarayan BARIK, Joshua David BROWN, Danyu LIU
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Publication number: 20150167162Abstract: An apparatus and method for forming a thin film on a substrate by RPCVD which provides for very low levels of carbon and oxygen impurities and includes the steps of introducing a Group VA plasma into a first deposition zone of a growth chamber, introducing a Group IIIA reagent into a second deposition zone of the growth chamber which is separate from the first deposition zone and introducing an amount of an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and a hydrogen plasma through an additional reagent inlet into the second deposition zone such that the additional reagent and the Group IIIA reagent mix prior to deposition.Type: ApplicationFiled: July 15, 2013Publication date: June 18, 2015Applicant: Gallium Enterprises Pty LtdInventors: Satyanarayan Barik, Marie-Pierre Francoise Wintrebert EP Fouquet, Ian Mann
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Patent number: 8910590Abstract: An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.Type: GrantFiled: February 12, 2010Date of Patent: December 16, 2014Assignee: Gallium Enterprises Pty Ltd.Inventors: Conor Nicholas Martin, Guy Reynolds, Piotr Glowacki, Satyanarayan Barik, Patrick Po-Tsang Chen, Marie-Pierre Francoise Wintrebert Ep Fouquet
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Patent number: 8298624Abstract: A process and apparatus for growing a group (III) metal nitride film by remote plasma enhanced chemical vapor deposition are described. The process comprises heating an object selected from the group consisting of a substrate and a substrate comprising a buffer layer in a growth chamber to a temperature in the range of from about 400° C. to o about 750° C., producing active neutral nitrogen species in a nitrogen plasma remotely located from the growth chamber and transferring the active neutral nitrogen species to the growth chamber. A reaction mixture is formed in the growth chamber, the reaction mixture containing a species of a group (III) metal that is capable of reacting with the nitrogen species so as to form a group (III) metal nitride film and a film of group (III) s metal nitride is formed on the heated object under conditions whereby the film is suitable for device purposes. Also described is a group (III) metal nitride film which exhibits an oxygen concentration below 1.6 atomic %.Type: GrantFiled: September 27, 2005Date of Patent: October 30, 2012Assignee: Gallium Enterprises Pty Ltd.Inventors: Kenneth Scott Alexander Butcher, Marie-Pierre Francoise Wintrebert ep Fouquet, Patrick Po-Tsang Chen, John Leo Paul Ten Have, David Ian Johnson
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Patent number: 7553368Abstract: A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the gallium species and the nitrogen species being selected such that, when they react with each other, gallium nitride is formed; and (b) growing the gallium rich gallium nitride film from the reaction mixture, by allowing the gallium species to react with the nitrogen species and to deposit gallium nitride on a substrate selected from the group consisting of silicon, glass, sapphire, quartz and crystalline materials having a lattice constant closely matched to gallium nitride, including zinc oxide, optionally with a zinc oxide buffer layer, at a temperature of from about 480° C. to about 900 ° C. and in the presence of a gaseous environment in which the partial pressure of oxygen is less than 10?4 Torr, wherein the ratio of gallium atoms to nitrogen atoms in the gallium rich gallium nitride film is from 1.01 to 1.20.Type: GrantFiled: May 19, 2003Date of Patent: June 30, 2009Assignee: Gallium Enterprises Pty Ltd.Inventors: Kenneth Scott Alexander Butcher, Trevor Lionel Tansley, Afifuddin
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Publication number: 20090020768Abstract: A semiconductor device comprising: a substrate; a first contact; a first layer of doped semiconductor material deposited on the substrate; a semiconductor junction region deposited on the first layer; a second layer of doped semiconductor material deposited on the junction region, the second layer having opposite semiconductor doping polarity to that of the first layer; and a second contact; wherein the second contact is in electrical communication with the second layer and the first contact is embedded within the semiconductor device between the substrate and the junction region and is in electrical communication with the first layer; and processes for manufacture of an embedded contact semiconductor device.Type: ApplicationFiled: July 18, 2008Publication date: January 22, 2009Applicant: Gallium Enterprise Pty Ltd., an Australian companyInventors: Kenneth Scott Alexander Butcher, Marie-Pierre Francoise Wintrebert ep Fouquet, Alanna Julia June Fernandes