Patents Assigned to GAMC Biotech Development Co., Ltd.
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Patent number: 8709859Abstract: A method of fabricating a solar cell on a conveyer belt is provided. The method includes the following steps. A first surface of an aluminum foil is coated with a layer of phosphorous mixed with a plurality of graphite powders and put on the conveyer belt. A first thermal treatment is performed to activate a portion of the aluminum foil and the phosphorous layer on the first surface to form an aluminum phosphide (AlP) layer. A molten silicon material is spray-coated on a second surface of the remaining aluminum foil, and a second thermal treatment is performed to make the silicon material transferring into a p-type polySi layer on the n-type AlP layer. A solar cell including the n-type AlP layer and the p-type polySi layer is formed, and the solar cell is respectively annealed and cooled down in a first and a second vertical stack.Type: GrantFiled: February 1, 2013Date of Patent: April 29, 2014Assignee: GAMC Biotech Development Co., Ltd.Inventor: Chia-Gee Wang
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Publication number: 20130203212Abstract: A method of fabricating a solar cell on a conveyer belt is provided. The method includes the following steps. A first surface of an aluminum foil is coated with a layer of phosphorous mixed with a plurality of graphite powders and put on the conveyer belt. A first thermal treatment is performed to activate a portion of the aluminum foil and the phosphorous layer on the first surface to form an aluminum phosphide (AlP) layer. A molten silicon material is spray-coated on a second surface of the remaining aluminum foil, and a second thermal treatment is performed to make the silicon material transferring into a p-type polySi layer on the n-type AlP layer. A solar cell including the n-type AlP layer and the p-type polySi layer is formed, and the solar cell is respectively annealed and cooled down in a first and a second vertical stack.Type: ApplicationFiled: February 1, 2013Publication date: August 8, 2013Applicant: GAMC Biotech Development Co.,LTD.Inventor: GAMC Biotech Development Co.,LTD.
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Publication number: 20130125972Abstract: A method for fabricating a p-type semiconductor substrate including the following steps is provided. A carrier is provided, and the carrier includes a III-V compounds semiconductor layer and a III element layer disposed on the III-V compounds semiconductor layer. Si powders are disposed onto the III element layer of the carrier. The carrier is heated to enable the Si powders and the III element layer of the carrier to form a p-type poly-Si layer. In addition, a solar cell and a method of fabricating thereof are also provided.Type: ApplicationFiled: October 17, 2012Publication date: May 23, 2013Applicant: GAMC Biotech Development Co., LTD.Inventor: GAMC Biotech Development Co., LTD.
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Publication number: 20130115507Abstract: The present invention is directed to a thin film lithium-ion battery having at least a laminate structure therein. The laminate structure includes a bottom current collector layer, an anode consisting of a superlattice layer and a silicon based layer, an electrolyte and separator, a cathode and a top current collector layer sequentially stacked together. The electrolyte and separator of the laminate structure contains lithium ions.Type: ApplicationFiled: November 8, 2012Publication date: May 9, 2013Applicant: GAMC BIOTECH DEVELOPMENT CO.,LTD.Inventor: GAMC Biotech Development Co.,LTD.
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Publication number: 20130108024Abstract: The present invention provides a transmission type X-ray tube and a reflection type X-ray tube. The transmission type X-ray tube comprises a target and a filter material. The target has at least one element which produces X-rays as being excited. The X-rays comprise characteristic K? and K? emission energies of the element for producing images of an object impinged by the X-rays. The filter material through which the X-rays pass has a k-edge absorption energy that is higher than the K? emission energies and is lower than the K? emission energies. The thickness of the filter material is at least 10 microns and less than 3 millimeters.Type: ApplicationFiled: June 5, 2012Publication date: May 2, 2013Applicant: GAMC BIOTECH DEVELOPMENT CO.,LTD.Inventors: Bruce Briant Parsons, Chi-Chieh Cheng
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Patent number: 8406378Abstract: This invention relates to the use of thick target materials 50 microns and thicker for an x-ray transmission tube; to possible target material compositions including various elements and their alloys, eutectic alloys, compounds, or intermetallic compounds; and applications for utilizing such thick target transmission x-ray tubes. The target comprises at lease one portion of the target with a thickness of 50 microns or greater. The target can be optionally attached to a substrate end-window essentially transparent to x-rays or be thick enough so that no such substrate is required. Applications include producing a high percentage of monochromatic line mission x-rays of said thick target for use in reduced dose medical imaging and other non-destructive testing applications.Type: GrantFiled: August 25, 2010Date of Patent: March 26, 2013Assignee: GAMC Biotech Development Co., Ltd.Inventors: Chia-Gee Wang, Bruce Briant Parsons