Abstract: An aqueous and semi-aqueous formulation useful for removing post etch and ash residue from Cu low K dielectric semiconductor devices. The composition comprises a polycarboxylic acid buffering system, a fluoride system, water, a water miscible organic solvent for the said aqueous compositions and optionally a chelating agent, a metal corrosion inhibitor and a surfactant.

Abstract: Removal of silica-based etch residue is effected by use of an aqueous chemistry which eliminates hazard concerns in connection with electronic component fabrication tooling. The system employs a formulated product comprising a controlled level of ionized fluorine in a citrate buffer containing a dual surfactant system for etch residue penetration and rinsing. The combined system is proven to be ideal for Si-based etch residue dissolution and removal. The Si-residue removal rates have been characterized at specific buffered pH values and normal process conditions at times between 45 sec. to 3 min., and with those described being effectual at times of the order of 45 sec. or less when processed in a single-wafer tool. The product simplifies and reduces cost time and materials.

Abstract: An improved aqueous soluble surfactant which has particular utility for incorporating in etchants for semiconductor devices is provided. The surfactant comprises a combination of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol.

Abstract: A process which uses a silicone resin to form a wafer-to-carrier bonded package that enables wafer thinning and backside processing while the cured resin exhibits high chemical and thermal resistance. The process is versatile in that the constructed wafer package allows for a wide range of chemical exposures to include dilute acid and base etchants, resist and residue strippers, electroplating chemistries, and also providing use in a range of deposition and etch processes that may exceed 300° C. The process utilizes a mixture of silicone monomers that when applied to semiconductor wafers by a spin-coat application, the result is a planarization of the front side device area, and when a subsequent thin coat is applied will facilitate bonding of the wafer-to-carrier package when heat and pressure are applied. The cured silicone bonded wafer-to-carrier package allows for wafer thinning consistent to industry objectives.

Abstract: An improved aqueous soluble surfactant which has particular utility for incorporating in etchants for semiconductor devices is provided. The surfactant comprises a combination of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol.

Abstract: A process is provided for the production of liquid ferric sulfate from finely-divided ferric oxide, sulfuric acid and water in a reaction system comprising at least one closed reaction vessel at temperatures ranging from about 120° C. to about 150° C. and pressures from about 25 psi to about 70 psi. Iron oxide streams are fed countercurrent to the ferric sulfate reaction product stream and to the sulfuric acid and water feeds. The continuity of the reaction is effected by re-circulating fractions while withdrawing a fraction of the liquid ferric sulfate having a trivalent iron concentration of at least 10% from the reaction vessel. Yield and efficiency are provided by controlling the rate of iron ore, sulfuric acid and specific gravity and by counter current cycling the waste stream from the reaction through the dilution water and use of a polymeric settling agent to remove unreacted iron content from the digester output.

Abstract: A chemical stripping solvent composition is provided for removing cured polymeric isoprene and bisbenzocyclobutene (BCB) substances from an inorganic substrate. The stripping composition comprises about 20 to about 30 weight percent anisole, about 20 to about 30 weight percent mesitylene, about 35 to about 55 weight percent of an alkylbenzene sulfonic acid, and may contain methane sulfonic acid (MSA) at 3 to about 10 weight percent, added to remove BCB in the full-cured state. Also provided is a method for stripping cured polymeric organic substances by contacting the polymeric organic substance with the stripping solvent composition at a given temperature and for a period of time sufficient to essentially dissolve and remove cured polymeric substances.

Abstract: A system is provided for enhancing the environment in enclosed facilities for rearing livestock. The system involves the addition of a suitable amount of liquid ferric sulfate or ferric chloride a mixture thereof to bedding material or to the floor area where the livestock is confined. The concentration of the ferric compound in the applied liquid is sufficient to maintain a pH of about 7.5 and most preferably between 4.0 and 7.0 in the confined environment and such that it inhibits ammonia volatilization and stabilizes, i.e. insolubilizes any resulting soluble phosphorus generated.

Abstract: An improved etching and cleaning composition for semiconductor devices is provided in which the etch solution incorporates a novel surfactant comprising a combination of a linear perfluorocarboxylic acid, a cyclic amine and an aliphatic alcohol.

Abstract: A liquid form adhesive system is provided for spin-coating on wafers and mounting to rigid carrier substrates to support thinning and backside processing. The liquid adhesive comprises about 30–35% of a rosin, between 5–10% of a thermoplastic urethane, a nonionic surfactant present between 1–3%, and a trace of an ultraviolet fluorescing dye. The entire system is dissolved in 50–65%, by weight, of a dual solvent mixture composed of dimethylacetamide and propylene glycol monomethyl ether. When the mixture is made to a specific viscosity, filtered, applied by a spin-coating method to the wafer frontside surface, and cured, the result is a uniform and smooth surface of defined thickness. When the coated wafer is mounted to a rigid substrate, it may be mechanically thinned to thicknesses down to and beyond 25 um, depending upon the wafer composition, diameter, and process.

Abstract: A process is provided for the removal of undesirable organic matter from solutions of sodium nitrite that are generated as byproducts in the manufacture of thermoplastic resins. The process employs certain activated carbon types derived from lignite granular material under conditions that are favorable to promote the absorption of the organic matter of a variety of organic substances that are residuals that remain from organic phase specifications in the plastics manufacture.