Abstract: Apparatus for generating negative ions, specifically He.sup.- ions. Positive ions at a predetermined energy level from a conventional ion source are directed to a permanent magnet channel that utilizes two, spaced permanent magnet assemblies to analyze the ions and, with double focusing, to direct them to a focal point located in a lithium vapor canal. As the positive ion beam passes through a lithium vapor of constant density in a predetermined volume at the central region of the canal, electrons transfer to the ions and produce He.sup.- ions. The canal is constructed to efficiently condense and collect lithium vapor as it escapes the predetermined volume. The beam of negative ions then passes to another permanent magnet assembly that corrects any astigmatism in the emerging beam and that directs the beam, with appropriate optical properties, onto an injection axis for another accelerating structure.

Abstract: Apparatus for generating negative ions, specifically He.sup.- ions. Positive ions at a predetermined energy level from a conventional ion source are directed to a permanent magnet channel that utilizes two, spaced permanent magnet assemblies to analyze the ions and, with double focusing, to direct them to a focal point located in a lithium vapor canal. As the positive ion beam passes through a lithium vapor of constant density in a predetermined volume at the central region of the canal, electrons transfer to the ions and produce He.sup.- ions. The canal is constructed to efficiently condense and collect lithium vapor as it escapes the predetermined volume. The beam of negative ions then passes to another permanent magnet assembly that corrects any astigmatism in the emerging beam and that directs the beam, with appropriate optical properties, onto an injection axis for another accelerating structure.

Abstract: An apparatus is disclosed for the implantation of ions into semiconductor wafers wherein a plurality of storage compartments are connected through valves to a vacuum chamber. A wafer handling device transfers wafers between the storage compartments and a wafer holding device. The wafer holding device positions the wafers in front of an ion beam source. The wafer holding device is a rotatable frustum having a rear end, front end and four trapezoidally shaped sides. Clamps are provided on each side for holding the wafer against the side.

Abstract: A device for protecting electrical circuit components from surges induced by transient electromagnetic fields by isolating such components in a region of substantially uniform and constant field is disclosed. The device generally comprises at least two substantially identical conducting members in spaced, stacked relation, forming in the spaces between adjacent members a central component receiving region of substantially uniform and constant field surrounded in turn by a transitional region, a high energy storage region, and a second transitional region such that under surge conditions the device will remain electrically stable and the energy of the surge will be stored in the high energy storage region leaving the component protecting region substantially unaffected.

Abstract: The present invention comprehends an extremely sensitive apparatus which can be used for the detection of electronegative particles and provide data as to their elemental composition. A mass spectrometer selects negative ions of the required mass coming from an ion source. These ions are then directed into a dissociator which fragments complex molecules and strips electrons from the resulting products producing positively charged ions. These positively charged ions are filtered by a series of elements which independently measure some combination of the quantities: energy/charge, energy, momentum/charge, velocity, charge. Such measurement allows the actual mass of each particle to be uniquely defined and, if necessary, over-determined for reduction of backgrounds.