Abstract: A substrate for depositing diamond by CVD, comprising a base body of hard material and a coating layer that holds diamond particles as seed crystal in a matrix and is deposited joined thereto on a surface of said base body, wherein: the seed diamond particles have an average particle size of 1 ?m or smaller; the matrix comprises a first metal selected from a first group of Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W and/or a first compound between said first metal and a non-metallic substance selected from boron, carbon and nitrogen, said matrix holding the diamond particles distributed therein; and a joint zone developed as a result of a diffusion process and extending over said base body and coating layer comprises either or both atoms of said first metal and a component metal of the hard material.
Type:
Grant
Filed:
November 9, 2010
Date of Patent:
May 30, 2017
Assignees:
Tomel Diamond Co., Ltd., National University of Science and Technology “MISIS”, General Physics Institute of Russian Academy of Science
Inventors:
Evgeny A. Levashov, Ekaterina V. Azarova, Victor G. Ralchenko, Andrey Bol'Shakov, Evgeny E. Ashkinazi, Hiroshi Ishizuka, Satoru Hosomi
Abstract: A substrate for depositing diamond by CVD, comprising a base body of hard material and a coating layer that holds diamond particles as seed crystal in a matrix and is deposited joined thereto on a surface of said base body, wherein: the seed diamond particles have an average particle size of 1 ?m or smaller; the matrix comprises a first metal selected from a first group of Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W and/or a first compound between said first metal and a non-metallic substance selected from boron, carbon and nitrogen, said matrix holding the diamond particles distributed therein; and a joint zone developed as a result of a diffusion process and extending over said base body and coating layer comprises either or both atoms of said first metal and a component metal of the hard material.
Type:
Application
Filed:
November 9, 2010
Publication date:
September 5, 2013
Applicants:
TOMEI DIAMOND CO., LTD., General Physics Institute of Russian Academy of Science, National University of Science and Technology "Misis"
Inventors:
Evgeny A. Levashov, Ekaterina V. Azarova, Victor G. Ralchenko, Andrey Bol'Shakov, Evgeny E. Ashkinazi, Hiroshi Ishizuka, Satoru Hosomi