Abstract: A Liquid Crystal Display (LCD), a backlight used for the LCD and a method for producing the LCD and the backlight are provided which are capable of inhibiting an increase in component counts and in assembling processes and of reducing them, thereby achieving low costs. A display image is obtained by arranging a backlight section being able to perform scanning as a single unit in a manner that it positionally matches a liquid crystal displaying section. The backlight section is provided with a plurality of scanning electrodes and light emitting layers each providing a different luminescent color, and being spatially separated from each other on a principal face of the backlight and scanning is performed on a plurality of light emitting layers providing a different luminescent color.

Abstract: A Liquid Crystal Display (LCD), a backlight used for the LCD and a method for producing the LCD and the backlight are provided which are capable of inhibiting an increase in component counts and in assembling processes and of reducing them, thereby achieving low costs. A display image is obtained by arranging a backlight section being able to perform scanning as a single unit in a manner that it positionally matches a liquid crystal displaying section. The backlight section is provided with a plurality of scanning electrodes and light emitting layers each providing a different luminescent color, and being spatially separated from each other on a principal face of the backlight and scanning is performed on a plurality of light emitting layers providing a different luminescent color.

Abstract: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./?m or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 ?m or less.

Abstract: A Liquid Crystal Display (LCD), a backlight used for the LCD and a method for producing the LCD and the backlight are provided which are capable of inhibiting an increase in component counts and in assembling processes and of reducing them, thereby achieving low costs. A display image is obtained by arranging a backlight section being able to perform scanning as a single unit in a manner that it positionally matches a liquid crystal displaying section. The backlight section is provided with a plurality of scanning electrodes and light emitting layers each providing a different luminescent color, and being spatially separated from each other on a principal face of the backlight and scanning is performed on a plurality of light emitting layers providing a different luminescent color.

Abstract: To obtain an amplifier circuit capable of realizing low power consumption and high-precision output. A controlling unit controls each switch of an offset correction circuit to select one capacitor associated with a voltage level of an input signal selected by an input signal selection unit, have an offset voltage of an operational amplifier generated according to the voltage level of the input signal stored by the selected capacitor, and correct an output of the operational amplifier by using the offset voltage held by the selected capacitor.

Abstract: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./?m or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 ?m or less.

Abstract: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./?m or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 ?m or less.

Abstract: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./?m or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 ?m or less.

Abstract: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./?m or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 ?m or less.

Abstract: In a display device equipped with a light source device, a second light-guide member is provided to the back surface of a first light-guide member that has an emitted light control sheet provided to the front surface thereof. The emitted light control sheet is composed of a flat plate portion and protrusions. A first light source mounted to a side surface of the first light-guide member, and a second light source mounted to a side surface of a second light-guide member are switched and turned on. The emitted light control sheet has light-condensing effects when the first light source is on, and has diffusing effects when the second light source is turned on. The angle range of illuminating light can thereby be switched.

Abstract: An edge-light type backlight unit reduces the color unevenness on the display screen caused by the arrangement of point-shaped light sources (e.g., LEDs) in a point-shaped light source unit comprising a set of point-shaped light sources aligned. The backlight unit includes at least one point-shaped light source unit having point-shaped light sources arranged in a single direction in a predetermined order, the light sources emitting monochromatic light of different colors. The unit further comprises a first optical filter for limiting or controlling transmission of the monochromatic light emitted from one of the light sources disposed at one end of the light source unit, and a second optical filter for limiting or controlling transmission of the monochromatic light emitted from another of the light sources disposed at the other end thereof. The first and second filters are selectively formed on a first or second light guide plate or a diffusing plate.

Abstract: A backlight for a color liquid crystal display apparatus includes a first light-guide plate; a first incidence part for receiving light of a first primary color in a first area on a first lateral surface of the first light-guide plate; a second incidence part for receiving light of a second primary color light in a second area on a second lateral surface that is opposite to the first lateral surface of the first light-guide plate; and a third incidence part for receiving light of a third primary color in a third area on a rear surface of the first light-guide plate. The number of superposition steps is thereby reduced, light-guide plates can easily be superposed onto an LCD panel with high accuracy, and a lightweight and inexpensive backlight for a color liquid crystal display apparatus can be obtained.