Abstract: Disclosure regards a temperature sensor and a temperature-sensing data processing module, including two counting units, each configured to set a reference clock signal and a frequency conversion signal to be a counting-clock signal and a counting-sample signal according to a control signal, wherein during a sampling period consisting of at least one signal cycle of the counting-sample signal, the two counting units count the numbers of rising edges and falling edges of the counting-clock signal; and a count-control unit configured to generate a doubled-frequency counting value based on a sum of the number of rising edges and the number of falling edges to generate a temperature value based on the doubled-frequency counting value and a temperature-frequency fitting function. Therefore, problems regarding temperature estimation errors in the prior art are effectively solved.

Abstract: Disclosure regards a signal conversion device and method and an analog-to-digital converter, including a channel module including a plurality of sampling channels, wherein each of the plurality of sampling channels is configured to receive an analog signal; a timing-control module configured to provide a plurality of candidate sequences including a first sequence and a second sequence for the same sampling channel, wherein the timing-control module sets a first sampling time corresponding to the first sequence and a second sampling time corresponding to the second sequence; a conversion module electrically coupled to the timing-control module and the channel module, wherein the conversion module is configured to convert the analog signal from the same sampling channel into a digital signal in response to an order and sampling times defined by the candidate sequences. Therefore, problems of poor sampling accuracy and flexibility in the current sampling technologies are effectively solved.

Abstract: A non-volatile memory includes a plurality of blocks and a controller. Each of the plurality of blocks includes a plurality of pages, and each of the plurality of pages includes a plurality of storage units. The controller is configured to perform: receiving an erase command for a target block of the plurality of blocks; executing a read operation on each page of the target block; and executing a first erase operation to apply word line voltages to the plurality of pages, where the word line voltages are determined by a read result of the read operation of each page. An operation method of a non-volatile memory and an electronic device are also provided.

Abstract: The present invention discloses semiconductor devices that can be manufactured utilizing standard process of manufacturing and that can hold information. In accordance with a presently preferred embodiment of the present invention, one or more semiconductor devices can be formed in a well on a substrate where isolation trenches surround one or more devices to create storage regions (floating wells) that is capable of holding a charge. Depending on the charge in the storage region (floating well), it can represent information. The semiconductor devices of the present invention can be manufactured using the standard process of manufacturing (bulk cmos processing).

Abstract: The present invention discloses semiconductor devices that can be manufactured utilizing standard process of manufacturing and that can hold information. In accordance with a presently preferred embodiment of the present invention, one or more semiconductor devices can be formed in a well on a substrate where isolation trenches surround one or more devices to create storage regions (floating wells) that is capable of holding a charge. Depending on the charge in the storage region (floating well), it can represent information. The semiconductor devices of the present invention can be manufactured using the standard process of manufacturing (bulk cmos processing).