Abstract: Nuclear fusion processes with enhanced rates may be realized by providing energetic electrons in an environment containing a suitable fuel gas, a liquid fuel source, a solid fuel source, a plasma fuel source, or any combination thereof. The fuel source may be deuterium, tritium, a combination thereof, or any fuel source capable of creating deeply screened and/or neutral nuclei when exposed to energetic electrons. Under proper conditions, at least some of the deeply screened and/or neutral nuclei fuse with other nuclei. Neutral versions of deuteron and/or triton nuclei may be created by bringing neutrons with certain energy levels (e.g., around 3 MeV, but optionally less or much less than 3 MeV) into interaction with other neutrons, forming neutral versions of deuterons and/or tritons. Such processes may be used for power generation, heat production, nuclear waste remediation, material creation, and/or medical isotope production, for example.

Abstract: Disclosing herein is a method for manufacturing nickel-titanium compositions. The method includes disposing a powdered composition in a mold; the powdered composition comprising nickel and titanium; the titanium being present in an amount of about 38 to about 42 wt % and the nickel being present in an amount of about 58 to about 62 wt %; sintering the powdered composition to produce a sintered preform; compacting the preform; machining the preform to form an article; heat treating the article; the annealing being conducted at a temperature of about 1650° F. to about 1900° F. at a pressure of about 3 Torr to about 5 Kg?f/cm2 for a time period of about 10 minutes to about 5 hours; and quenching the article.

Abstract: A power source and methods thereof includes a structure comprising one or more p type layers, one or more n type layers, and one or more intrinsic layers and at least one source of radiation is disposed on at least a portion of the structure. Each of the p type layers is separated from each of the n type layers by one of the intrinsic layers.

Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Abstract: A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.

Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Abstract: A photovoltaic device includes three or more solar cells which are layered on top of each other, at least one of quantum dots and quantum dashes, and first and second conductors. The quantum dots or quantum dashes are incorporated in at least one of the solar cells which is between the other solar cells. The first conductor is coupled to one of the solar cells and the second conductor is coupled to another one of the solar cells.

Abstract: A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.

Abstract: A power source and methods thereof includes a structure comprising one or more p type layers, one or more n type layers, and one or more intrinsic layers and at least one source of radiation is disposed on at least a portion of the structure. Each of the p type layers is separated from each of the n type layers by one of the intrinsic layers.

Abstract: A system for providing wireless, charging power and/or primary power to electronic/electrical devices is described whereby microwave energy is employed. Microwave energy is focused by a power transmitter comprising one or more adaptively-phased microwave array emitters onto a device to be charged. Rectennas within the device to be charged receive and rectify the microwave energy and use it for battery charging and/or for primary power. A locator signal generated by the device to be charged is analyzed by the system to determine the location of the device to be charged relative to the microwave array emitters, permitting the microwave energy to be directly specifically towards the device to be charged. Backscatter detectors respond to backscatter energy reflected off of any obstacle between the device to be charged and the microwave array emitters. Power to any obstructed microwave array emitter is reduced until the obstruction is removed.