Abstract: Proposed is a powder removing apparatus using a screw cylinder for a gas processing facility, in which the powder removing apparatus has a structure in which a scraper is coupled to the screw cylinder that allows a piston rod to be moved forward while being rotated in one direction and to be moved backward while being rotated in a reverse direction according to a supply direction of fluid, thereby allowing the powder adhered to an inner circumferential surface of a pipeline of the gas processing facility or an inner wall surface of the gas processing facility to be easily and efficiently removed. According to an embodiment of the present disclosure, the powder removing apparatus includes the screw cylinder and a scraper.

Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.

Abstract: The present invention relates to a high-tech temperature control device for a semiconductor manufacturing facility and, more specifically, to a high-tech temperature control device for an electrostatic chuck, which supports a wafer and maintains the temperature in a semiconductor wafer processing process. It is possible to very precisely control a temperature of an electrostatic chuck by maintaining temperatures and a mixing flow rate of a heating heat medium and a cooling heat medium constant and adjusting a mixing ratio. Meanwhile, the heat medium after heating and cooling is collected and reused, thereby efficiently using energy.

Abstract: An apparatus for purifying waste gases for an integrated semiconductor is provided, which includes a cover including a burner mounted thereon to generate a flame and a plurality of waste gas inlet pipes formed on a circumference of the burner to make waste gases flow therethrough; a reactor including upper and lower openings formed thereon so that the cover is detachably coupled to the upper opening, a converging member tapered to have a smaller diameter as going toward a lower portion thereof, and a transport pipe vertically arranged to communicate with an apex of the converging member, in which a water curtain is formed to prevent accumulation of by-products, to burn and discharge the inflow waste gases; and a cleaning portion integrally formed in the reactor to water-clean the burnt waste gases that are discharged into the reactor after passing through the transport pipe to collect particles. Since the burner, the reactor, and the scrubber are integrally formed in a body.

Abstract: The disclosure relates to a waste gas purification method, and more particularly, to a waste gas burning method of reducing CO and NOx by burning waste gases using a system for individually controlling CO and NOx. In accordance with the disclosure, there is provided a low-pollution burning method using a system for individually controlling CO and NOx including a waste gas introduction and flame injection step; a first waste gas burning step; and a second waste gas burning step.

Abstract: The disclosure relates to a waste gas purification method, and more particularly, to a waste gas burning method of reducing CO and NOx by burning waste gases using a system for individually controlling CO and NOx. In accordance with the disclosure, there is provided a low-pollution burning method using a system for individually controlling CO and NOx including a waste gas introduction and flame injection step; a first waste gas burning step; and a second waste gas burning step.

Abstract: The present invention discloses an apparatus and method for treating perfluoro-compounds (PFCs). The method for treating PFCs includes: (a) decomposing PFCs and eliminating a first acid gas generated by the decomposition through a pre-cleaner; (b) filtering out dust particles from the exhaust gas through a filter; (c) electrifying the dust particles in the exhaust gas by electrical discharge and collecting dusts through a dust collector; (d) decomposing PFCs using a regenerative/catalytic reaction through a catalytic reactor; (e) eliminating a second acid gas generated by the regenerative/catalytic reaction through a post-cleaner; and (f) letting the purified exhaust gas out through a fan.

Abstract: The disclosure relates to a waste gas purification apparatus, and more particularly, to a waste gas combustion apparatus to burn and process waste gases. The disclosure provides the waste gas combustion apparatus to process the waste gases generated in an industrial process, such as a chemical process, a semiconductor manufacturing process, or an LCD manufacturing process. The waste gas combustion apparatus includes a combustion gas supply unit provided with a first combustion region in which the waste gases are primarily burned by supply of fuel gases which are pre-mixed with diluted fuel gases, and a second combustion region which is supplied with support gases so as to completely burn fuel gases which are not reacted in the first combustion region.

Abstract: A temperature control system for semiconductor manufacturing equipment is disclosed, which can properly cool a process chamber adopted in the semiconductor manufacturing equipment such as a wafer etching device. The temperature control system for semiconductor manufacturing equipment includes a thermocline for cooling heat transfer fluid accommodated therein through a heat exchange with a heat exchanger and storing heat energy, a supply line for controlling the temperature of the heat transfer fluid in the thermocline through a heater and supplying the heat transfer fluid with a proper temperature to a process device, a recovery line for forwarding the heat transfer fluid having passed through the process device to the thermocline, and a bypass for forwarding a part of the heat transfer fluid passing through the recovery line to the supply line through the heater.

Abstract: Disclosed is a waste gas treatment apparatus having a waste gas inlet for flowing a waste gas into a main combustion chamber provided in empty space inside a body, and a plasma torch configured to propagate flames against the waste gas flowing through the waste gas inlet. The apparatus comprises a steam injection nozzle configured to eject high temperature steam against the flames emitted through a nozzle of the plasma torch, and a reaction tube, extended longitudinally toward the bottom of the main combustion chamber into a tube shape, configured to perform the chemical reaction between a reaction accelerating compound and the waste gas induced by pressure of the nozzle of the plasma torch.