Patents Assigned to GLOBALFOUNDIERS Singapore Pte. Ltd.
  • High-K metal gate device
    Patent number: 8853796
    Abstract: A device includes a substrate with a device region surrounded by an isolation region, in which the device region includes edge portions along a width of the device region and a central portion. The device further includes a gate layer disposed on the substrate over the device region, in which the gate layer includes a graded thickness in which the gate layer at edge portions of the device region has a thickness TE that is different from a thickness TC at the central portion of the device region.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: October 7, 2014
    Assignees: GLOBALFOUNDIERS Singapore Pte. Ltd.
    Inventors: Young Way Teh, Michael V. Aquilino, Arifuzzaman (Arif) Sheikh, Yun Ling Tan, Hao Zhang, Deleep R. Nair, Jinghong H. (John) Li