Abstract: In sophisticated semiconductor devices, an efficient stress decoupling may be accomplished between neighboring transistor elements of a densely packed device region by providing a gap or a stress decoupling region between the corresponding transistors. For example, a gap may be formed in the stress-inducing material so as to reduce the mutual interaction of the stress-inducing material on the closely spaced transistor elements. In some illustrative aspects, the stress-inducing material may be provided as an island for each individual transistor element.
Type:
Grant
Filed:
November 28, 2012
Date of Patent:
September 9, 2014
Assignee:
GLOBALFOUNDRIE Inc.
Inventors:
Kai Frohberg, Frank Feustel, Thomas Werner